2001 Feb 27 3
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage − 40 V
I
F
continuous forward current − 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 − 300 mA
I
FSM
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
− 1 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
continuous forward voltage see Fig.6
I
F
= 0.1 mA 200 − mV
I
F
= 1 mA 260 − mV
I
F
= 10 mA 340 − mV
I
F
= 30 mA − 420 mV
I
F
= 100 mA − 550 mV
I
R
continuous reverse current V
R
= 25 V; note 1; see Fig.7 − 0.5 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; see Fig.8 − 20 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
