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PHP119NQ06T,127

P1-P3P4-P6P7-P9P10-P12P13-P13
PHP119NQ06T
N-channel TrenchMOS standard level FET
Rev. 02 — 16 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
General industrial applications
Motors, lamps and solenoids
Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175°C --55V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1; see Figure 3
--75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --200W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C; see Figure 9;
see Figure 10
-5.87.1mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
=44V; T
j
=25°C;
see Figure 11
-17-nC
PHP119NQ06T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 April 2010 2 of 13
NXP Semiconductors
PHP119NQ06T
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT78 (TO-220AB)
2 D drain
3Ssource
mb D mounting base; connected to
drain
12
mb
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PHP119NQ06T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
PHP119NQ06T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 April 2010 3 of 13
NXP Semiconductors
PHP119NQ06T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --55V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ --55V
V
GS
gate-source voltage -20 - 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 --75A
V
GS
=10V; T
mb
=25°C; see Figure 1;
see Figure 3
--75A
I
DM
peak drain current t
p
≤ 10 µs; pulsed; T
mb
=25°C;
see Figure 3
- - 240 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 200 W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
Source-drain diode
I
S
source current T
mb
=25°C --75A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - - 240 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=75A;
V
sup
≤ 55 V; unclamped; t
p
= 0.1 ms;
R
GS
=50Ω
- - 280 mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ap37
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
I
der
(%)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
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PHP119NQ06T,127

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Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 55V 75A TO220AB
Lifecycle:
New from this manufacturer.
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