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MJD44H11RLG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 20
1 Publication Order Number:
MJD44H11/D
MJD44H11(NPN),
MJD45H11(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25_C, common for NPN and PNP, minus
sign, “−”, for PNP omitted, unless otherwise noted)
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous I
C
8 Adc
Collector Current − Peak I
CM
16 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
J4xH11 = Device Code
x = 4 or 5
G = Pb−Free Package
1
2
3
4
AYWW
J4
xH11G
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
2
3
4
AYWW
J4
xH11G
www.onsemi.com
IPAKDPAK
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
DPAK
CASE 369G
STYLE 1
1
2
3
4
MJD44H11 (NPN), MJD45H11 (PNP)
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
71.4 °C/W
Lead Temperature for Soldering T
L
260 °C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
A
= 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
80 − −
Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
BE
= 0)
I
CES
− − 1.0
mA
Emitter Cutoff Current
(V
EB
= 5 Vdc)
I
EBO
− − 1.0
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.4 Adc)
V
CE(sat)
− − 1
Vdc
Base−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
V
BE(sat)
− − 1.5
Vdc
DC Current Gain
(V
CE
= 1 Vdc, I
C
= 2 Adc)
(V
CE
= 1 Vdc, I
C
= 4 Adc)
h
FE
60
40
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Collector Capacitance
(V
CB
= 10 Vdc, f
test
= 1 Mhz)
MJD44H11
MJD45H11
C
cb
−
−
45
130
−
−
pF
Gain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 Mhz)
MJD44H11
MJD45H11
f
T
−
−
85
90
−
−
MHz
SWITCHING TIMES
Delay and Rise Times
(I
C
= 5 Adc, I
B1
= 0.5 Adc)
MJD44H11
MJD45H11
t
d
+ t
r
−
−
300
135
−
−
ns
Storage Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJD44H11
MJD45H11
t
s
−
−
500
500
−
−
ns
Fall Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJD44H11
MJD45H11
t
f
−
−
140
100
−
−
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MJD44H11 (NPN), MJD45H11 (PNP)
www.onsemi.com
3
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT THERMAL
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
RESISTANCE (NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I
C
, COLLECTOR CURRENT (AMP)
20
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
3 100
2
0.5
5
0.1
THERMAL LIMIT @ T
C
= 25°C
WIRE BOND LIMIT
5 7 20 7010
100ms
dc
0.05
0.3
1
3
10
5030
Figure 2. Maximum Forward Bias
Safe Operating Area
1ms
500ms
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150_C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 3. Power Derating
T
C
T
A
SURFACE
MOUNT
P1-P3P4-P6P7-P9

MJD44H11RLG

Mfr. #:
Buy MJD44H11RLG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 8A 80V 20W NPN
Lifecycle:
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