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MJD44H11T5
P1-P3
P4-P6
P7-P9
MJD44H1
1 (NPN), MJD45H1
1
(PNP)
www
.onsemi.com
4
Figure 4. MJD44H1
1 DC Current Gain
Figure 5. MJD45H1
1 DC Current Gain
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
10
100
1000
Figure 6. MJD44H1
1 DC Current Gain
Figure 7. MJD45H1
1 DC Current Gain
Figure 8. MJD44H1
1 Saturation V
oltage
V
CE(sat)
Figure 9. MJD45H1
1 Saturation V
oltage
V
CE(sat)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLL−EMIT SA
TURA
TION VOL
T
AGE (V)
150
°
C
−55
°
C
25
°
C
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
10
100
1000
h
FE
, DC CURRENT GAIN
150
°
C
−55
°
C
25
°
C
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
10
100
1000
h
FE
, DC CURRENT GAIN
150
°
C
−55
°
C
25
°
C
V
CE
= 4 V
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
10
100
1000
h
FE
, DC CURRENT GAIN
150
°
C
−55
°
C
25
°
C
V
CE
= 4 V
0.5
150
°
C
−55
°
C
25
°
C
IC/IB = 20
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
V
CE(sat)
, COLL−EMIT SA
TURA
TION VOL
T
AGE (V)
0.5
150
°
C
−55
°
C
25
°
C
IC/IB = 20
MJD44H1
1 (NPN), MJD45H1
1
(PNP)
www
.onsemi.com
5
Figure 10. MJD44H1
1 Saturation V
oltage
V
BE(sat)
Figure 1
1. MJD45H1
1 Saturation V
oltage
V
BE(sat)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 12. MJD44H1
1 Collector Saturation
Region
Figure 13. MJD45H1
1 Collector Saturation
Region
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
10,000
1000
100
10
1
0.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
Figure 14. MJD44H1
1 Capacitance
Figure 15. MJD45H1
1 Capacitance
V
R
, REVERSE VOL
T
AGE (V)
100
10
1
0.1
10
100
1000
V
BE(sat)
, BASE−EMIT SA
TURA
TION
VOL
T
AGE (V)
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
C, CAP
ACIT
ANCE (pF)
150
°
C
−55
°
C
25
°
C
IC/IB = 20
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
BE(sat)
, BASE−EMIT SA
TURA
TION
VOL
T
AGE (V)
150
°
C
−55
°
C
25
°
C
IC/IB = 20
0.8
1.2
1.6
T
A
= 25
°
C
I
C
= 8 A
1 A
I
C
= 3 A
0.5 A
I
C
= 0.1 A
10,000
1000
100
10
1
0.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
0.8
1.2
1.6
T
A
= 25
°
C
Cob
V
R
, REVERSE VOL
T
AGE (V)
100
10
1
0.1
10
100
1000
C, CAP
ACIT
ANCE (pF)
Cob
I
C
= 8 A
1 A
I
C
= 3 A
0.5 A
I
C
= 0.1 A
MJD44H1
1 (NPN), MJD45H1
1
(PNP)
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.onsemi.com
6
Figure 16. MJD44H1
1
Current−Gain−Bandwidth Product
Figure 17. MJD45H1
1
Current−Gain−Bandwidth Product
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
10
1
0.1
0.01
10
100
10
1
0.1
0.01
10
100
f
Ta
u
, CURRENT−GAIN−BANDWIDTH
PRODUCT
f
Ta
u
, CURRENT−GAIN−BANDWIDTH
PRODUCT
V
CE
= 2 V
V
CE
= 2 V
P1-P3
P4-P6
P7-P9
MJD44H11T5
Mfr. #:
Buy MJD44H11T5
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 80V 8A DPAK
Lifecycle:
New from this manufacturer.
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