BAT760_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 17 October 2008 3 of 9
NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 10 × 10 mm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 40 × 40 mm
2
.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 220 K/W
[2]
- - 180 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 10 mA - 240 270 mV
I
F
= 100 mA - 300 350 mV
I
F
= 1 A - 480 550 mV
I
R
reverse current
[1]
V
R
=5V - 5 10 µA
V
R
=8V - 7 20 µA
V
R
=15V - 10 50 µA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz - 19 25 pF
