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2N6427

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 2
1 Publication Order Number:
2N6426/D
2N6426*, 2N6427
Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available**
• Device Marking: Device Type, e.g., 2N6426, Date Code
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
40 Vdc
Collector − Base Voltage V
CBO
40 Vdc
Emitter − Base Voltage V
EBO
12 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
JC
83.3 °C/W
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 1
*Preferred devices are recommended choices for future
use and best overall value.
MARKING
DIAGRAM
2N
642x
YWW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
1
2
3
642x Specific Device Code
Y = Year
WW = Work Week
2N6426*, 2N6427
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(I
C
= 10 mAdc, V
BE
= 0)
V
(BR)CEO
40 − − Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
40 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
12 − − Vdc
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
I
CES
− − 1.0 Adc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
− − 50 nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
− − 50 nAdc
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) 2N6426
2N6427
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) 2N6426
2N6427
(I
C
= 500 mAdc, V
CE
= 5.0 Vdc) 2N6426
2N6427
h
FE
20,000
10,000
30,000
20,000
20,000
14,000
−
−
−
−
−
−
200,000
100,000
300,000
200,000
200,000
140,000
−
Collector−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 0.5 mAdc)
(I
C
= 500 mAdc, I
B
= 0.5 mAdc
V
CE(sat)
−
−
0.71
0.9
1.2
1.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 0.5 mAdc)
V
BE(sat)
− 1.52 2.0 Vdc
Base−Emitter On Voltage
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
− 1.24 1.75 Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 5.4 7.0 pF
Input Capacitance
(V
EB
= 1.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 10 15 pF
Input Impedance
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz) 2N6426
2N6427
h
ie
100
50
−
−
2000
1000
k
Small−Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz) 2N6426
2N6427
h
fe
20,000
10,000
−
−
−
−
−
Current−Gain − High Frequency
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz) 2N6426
2N6427
|h
fe
|
1.5
1.3
2.4
2.4
−
−
−
Output Admittance
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
h
oe
− − 1000 mhos
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
S
= 100 k, f = 1.0 kHz)
NF − 3.0 10 dB
1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
2N6426*, 2N6427
http://onsemi.com
3
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (k)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (k)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
≈ 0
I
C
= 1.0 mA
100 A
10 A
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100 A
10 A
e
n
, NOISE VOLTAGE (nV)
i
n
, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10 A
100 A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 A
100 A
I
C
= 1.0 mA
V
T
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
P1-P3P4-P6

2N6427

Mfr. #:
Buy 2N6427
Manufacturer:
Central Semiconductor
Description:
Darlington Transistors NPN Darl Amp
Lifecycle:
New from this manufacturer.
Delivery:
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