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PSMN4R3-30PL,127

P1-P3P4-P6P7-P9P10-P12P13-P14
PSMN4R3-30PL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 June 2009 6 of 13
NXP Semiconductors
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.81 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-35-ns
Q
r
recovered charge - 30 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aad244
0
40
80
120
0 20406080100
I
D
(A)
g
fs
(S)
003aad241
0
20
40
60
80
100
012345
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
PSMN4R3-30PL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 June 2009 7 of 13
NXP Semiconductors
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad240
0
1000
2000
3000
4000
5000
036912
V
GS
(V)
C
(pF)
C
iss
C
rss
003aad238
0
4
8
12
0 5 10 15
V
GS
(V)
R
DSon
(m
Ω
)
003aad236
0
20
40
60
80
100
012345
V
DS
(V)
I
D
(A)
V
GS
(V) =2.5
3
3.5
4
5
10
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
PSMN4R3-30PL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 June 2009 8 of 13
NXP Semiconductors
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
003aac982
0
1
2
3
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max
typ
min
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a
003aad237
0
4
8
12
16
0 20406080100
I
D
(A)
R
DSon
(m
Ω
)
V
GS
(V) =10
3.5
3
4.5
5
4
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
P1-P3P4-P6P7-P9P10-P12P13-P14

PSMN4R3-30PL,127

Mfr. #:
Buy PSMN4R3-30PL,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET
Lifecycle:
New from this manufacturer.
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