PMEG2010AEH_PMEG2010AET_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 28 March 2007 3 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 20 V
I
F
forward current T
sp
≤ 55 °C-1A
I
FRM
repetitive peak forward current t
p
≤ 1 ms;
δ≤0.25
PMEG2010AEH - 7 A
PMEG2010AET - 6 A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=8ms
-9A
P
tot
total power dissipation T
amb
≤ 25 °C
PMEG2010AEH
[1]
- 375 mW
[2]
- 830 mW
PMEG2010AET
[1]
- 280 mW
[2]
- 420 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PMEG2010AEH
[2]
- - 330 K/W
[3]
- - 150 K/W
PMEG2010AET
[2]
- - 440 K/W
[3]
- - 300 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
PMEG2010AEH - - 60 K/W
PMEG2010AET - - 120 K/W
