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IPP100P03P3L-04
P1-P3
P4-P6
P7-P9
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
);
V
GS
≤
-4 V
I
D
=f(
T
C
);
V
GS
≤
-4 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1
1
10
100
-V
DS
[V]
-I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.05
0.1
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
0
50
100
150
200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
120
0
50
100
150
200
T
C
[°C]
-I
D
[A]
Rev. 1.1
page 4
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
= f(
V
DS
);
T
j
= 25 °C
R
DS(on)
= f(
I
D
);
T
j
= 25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I
D
= f(
V
GS
);
V
DS
= 4V
R
DS(on)
= f(
T
j
);
I
D
= -80 A;
V
GS
= 10 V
parameter:
T
j
0
1
2
3
4
5
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
Ω
]
2.5 V
5 V
3 V
3.5 V
4 V
4.5 V
10 V
0
100
200
300
400
0123456
-V
DS
[V]
-I
D/
[A]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
180
-I
D
[A]
R
DS(on)
[m
Ω
]
-55 °C
25 °C
175 °C
0
50
100
150
200
12345
-V
GS
[V]
-I
D
[A]
Rev. 1.1
page 5
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
9 Typ. gate threshold voltage
10 Typ. capacitances
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(V
SD
)
I
AV
= f(
t
AV
)
parameter:
T
j
parameter: T
j(start)
25°C
100°C
150°C
1
10
100
1000
1
10
100
1000
t
AV
[µs]
-I
AV
[A]
25 °C
175 °C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
5
10
4
10
3
0
5
10
15
20
25
30
-V
DS
[V]
C
[pF]
475µA
4750µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60
-20
20
60
100
140
180
T
j
[°C]
-V
GS(th)
[V]
Rev. 1.1
page 6
2007-09-25
P1-P3
P4-P6
P7-P9
IPP100P03P3L-04
Mfr. #:
Buy IPP100P03P3L-04
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -100A TO220-3 OptiMOS-P
Lifecycle:
New from this manufacturer.
Delivery:
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