IPP100P03P3L-04

IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
1 Power dissipation 2 Drain current
P
tot
=f(T
C
); V
GS
-4 V I
D
=f(T
C
); V
GS
-4 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D =0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
-V
DS
[V]
-I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.05
0.1
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
0 50 100 150 200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
120
0 50 100 150 200
T
C
[°C]
-I
D
[A]
Rev. 1.1 page 4 2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= f(I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 4V R
DS(on)
= f(T
j
); I
D
= -80 A; V
GS
= 10 V
parameter: T
j
0
1
2
3
4
5
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
]
2.5 V
5 V
3 V
3.5 V
4 V
4.5 V
10 V
0
100
200
300
400
0123456
-V
DS
[V]
-I
D/
[A]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
-I
D
[A]
R
DS(on)
[m
]
-55 °C
25 °C
175 °C
0
50
100
150
200
12345
-V
GS
[V]
-I
D
[A]
Rev. 1.1 page 5 2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(V
SD
) I
AV
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25°C
100°C
150°C
1
10
100
1000
1 10 100 1000
t
AV
[µs]
-I
AV
[A]
25 °C
175 °C
10
3
10
2
10
1
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
-V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
5
10
4
10
3
0 5 10 15 20 25 30
-V
DS
[V]
C
[pF]
475µA
4750µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60 -20 20 60 100 140 180
T
j
[°C]
-V
GS(th)
[V]
Rev. 1.1 page 6 2007-09-25

IPP100P03P3L-04

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -100A TO220-3 OptiMOS-P
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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