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QW-BSC10
Silicon Carbide Power Schottky Diode
REV:A
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
CDBJFSC3650-G
RoHS Device
Maximum Rating (at TA=25°C unless otherwise noted)
Reverse Voltage: 650 V
Forward Current: 3 A
Parameter
Unit
Repetitive peak reverse voltage
DC blocking voltage
Typical continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
650
30
53.2
23
7.83
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range
TSTG
-55 ~ +175
°C
Value
650
TC = 150°C
3
Repetitive peak forward surge current
IFRM
15
A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
= 25°CTc
= 110°CTc
Junction to case
Surge peak reverse voltage
VRSM
650
V
Circuit diagram
K(1) A(2)
K(3)
Features
- Rated to 650V at 3 Amps
- Short recovery time.
- High speed switching possible.
- Temperature independent switching behaviour.
- High temperature operation.
- High frequency operation.
- Positive .temperature coefficient on VF
TO-220F
Dimensions in inches and (millimeter)
0.516(13.10)
0.539(13.70)
0.100(2.55)
0.112(2.85)
0.602(15.30)
0.587(14.90)
0.130(3.30)
0.118(3.00)
0.388( 9.85)
0.404(10.25)
0.031(0.80)
0.020(0.50)
0.055(1.40)
0.031(0.80)
0.020(0.50)
0.043(1.10)
0.039(1.00)
0.024(0.60)
0.130(3.30)
0.154(3.90)
0.264(6.70)
0.248(6.30)
0.201(5.10)
0.118(3.00)
0.126(3.20)
0.173(4.40)
0.185(4.70)
0.098(2.50)
0.110(2.80)
0.100(2.55)
