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MBD301G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 1994
March, 2018 − Rev. 9
1 Publication Order Number:
MBD301/D
MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V
R
= 15 V
• Low Reverse Leakage − I
R
= 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
200 (Max) mA
Total Device Dissipation
@ T
A
= 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
P
F
280
200
2.8
2.0
MW
mW/°C
Operating Junction
Temperature Range
T
J
−55 to
+125
°C
Storage Temperature Range T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23TO−92
MARKING DIAGRAMS
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
4T M G
G
A = Assembly Location
Y = Year
W = Work Week
4T = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MBD
301
AYW G
G
SOT−23TO−92
www.onsemi.com
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
30 − −
V
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz) Figure 1
C
T
− 0.9 1.5
pF
Reverse Leakage
(V
R
= 25 V) Figure 3
I
R
− 13 200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
V
F
− 0.38 0.45
Vdc
Forward Voltage
(I
F
= 10 mAdc) Figure 4
V
F
− 0.52 0.6
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Package Shipping
†
MBD301G TO−92
(Pb−Free)
5,000 Units / Bulk
MMBD301LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBD301LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBD301LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
I
F
, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)I
F
, REVERSE LEAKAGE ( A)I
R
m
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
01020
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
T
A
= -40°C
T
A
= 85°C
T
A
= 25°C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
T
A
= 100°C
75°C
25°C
, TOTAL CAPACITANCE (pF)C
T
, MINORITY CARRIER LIFETIME (ps)t
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
I
F(PEAK)
I
R(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
P1-P3P4-P6P7-P8

MBD301G

Mfr. #:
Buy MBD301G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 200mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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