NTR5198NLT1G

© Semiconductor Components Industries, LLC, 2013
October, 2016 Rev. 2
1 Publication Order Number:
NTR5198NL/D
NTR5198NL
Power MOSFET
60 V, 155 mW, Single NChannel Logic
Level, SOT23
Features
Small Footprint Industry Standard Surface Mount SOT23 Package
Low R
DS(on)
for Low Conduction Losses and Improved Efficiency
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage V
DSS
60 V
GatetoSource Voltage V
GS
±20 V
Continuous Drain
Current R
Y
Jmb
(Notes 1, 2, 3, and 4)
Steady
State
T
A
= 25°C
I
D
2.2
A
T
A
= 100°C 1.6
Power Dissipation
R
Y
Jmb
(Notes 1 and 3)
T
A
= 25°C
P
D
1.5 W
T
A
= 100°C 0.6
Continuous Drain
Current R
q
JA
(Note 1, 2, 3, and 4)
Steady
State
T
A
= 25°C
I
D
1.7
A
T
A
= 100°C 1.2
Power Dissipation R
q
JA
(Notes 1 and 3)
T
A
= 25°C
P
D
0.9 W
T
A
= 100°C 0.4
Pulsed Drain Current T
A
= 25°C,
t
p
=10 ms
I
DM
27 A
Operating Junction and Storage Temperature T
J
,
T
stg
55 to
150
°C
Source Current (Body Diode) I
S
1.9 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
G
D
S
Device Package Shipping
ORDERING INFORMATION
www.onsemi.com
60 V
205 mW @ 4.5 V
155 mW @ 10 V
R
DS(on)
TYP
2.2 A
I
D
MAXV
(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
1
3
NChannel
NTR5198NLT1G SOT23
(PbFree)
3000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
AA6 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
3
Drain
1
Gate
2
Source
AA6 M G
G
NTR5198NLT3G SOT23
(PbFree)
10000 /
Tape & Reel
NTR5198NL
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoLead #3 Drain (Notes 2 and 3)
R
Y
Jmb
86 °C/W
JunctiontoAmbient Steady State (Note 3)
R
q
JA
139 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 250 mA
70 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
GatetoSource Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
Reference to 25°C, I
D
= 250 mA
6.5 mV/°C
DraintoSource OnResistance R
DS(on)
V
GS
= 10 V, I
D
= 1 A 107 155 mW
V
GS
= 4.5 V, I
D
= 1 A 142 205
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 1 A 3 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
182
pF
Output Capacitance C
oss
25
Reverse Transfer Capacitance C
rss
16
Total Gate Charge Q
G(TOT)
V
DS
= 48 V,
I
D
= 1 A
V
GS
= 4.5 V 2.8
nC
V
GS
= 10 V
5.1
Threshold Gate Charge Q
G(TH)
V
DS
= 48 V, I
D
= 1 A
V
GS
= 10 V
0.3
GatetoSource Charge Q
GS
0.8
GatetoDrain Charge Q
GD
1.5
Plateau Voltage V
GP
3.1 V
Gate Resistance R
G
8
W
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
t
d(on)
V
DS
= 30 V, V
GS
= 10 V,
I
D
= 1 A, R
G
= 10 W
5
ns
Rise Time t
r
7
TurnOff Delay Time t
d(off)
13
Fall Time t
f
2
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 1 A
T
J
= 25°C 0.8 1.2
V
T
J
= 125°C 0.6
Reverse Recovery Time t
rr
I
S
= 1 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
12
ns
Charge Time t
a
9
Discharge Time t
b
3
Reverse Recovery Stored Charge Q
RR
6 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTR5198NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V) V
GS
, GATETOSOURCE VOLTAGE (V)
543210
0
1
2
3
4
431
0
2
4
6
15
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
10987653
0.05
0.10
0.15
0.30
0.35
0.45
0.50
210
0.05
0.10
0.25
0.35
0.40
0.50
Figure 5. OnResistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
150125100502502550
0.6
1.0
1.5
2.0
1005002550
0.900
1.000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (Normalized)
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
0.20
0.40
75
I
D
= 250 mA
V
GS
= 4.5 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 150°C
T
J
= 55°C
I
D
= 1 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 1 A
V
GS
= 10 V
V
GS
= 6.0 V
V
GS
= 3.4 V
V
GS
= 3.2 V
V
GS
= 3.8 V
4
0.25
3
0.15
0.20
0.30
0.45
5
6
7
8
9
10
11
12
13
14
15
V
GS
= 5.0 V
V
GS
= 10 V
V
GS
= 3.6 V
V
GS
= 3.0 V
V
GS
= 4.0 V
25
1
3
5
7
8
10
12
9
11
13
14
5468791110 12 1413 15
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
1.7
1.8
1.9
25 75 125 150
0.925
0.950
0.975
1.025
1.050
1.075
1.100
1.125
1.150

NTR5198NLT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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