Table 11: Thermal Characteristics
Symbol Parameter/Condition Value Units Notes
T
C
Commercial operating case temperature 0 to 85 °C 1, 2, 3
T
C
>85 to 95 °C 1, 2, 3, 4
T
OPER
Normal operating temperature range 0 to 85 °C 5, 7
T
OPER
Extended temperature operating range (optional) >85 to 95 °C 5, 7
T
STG
Non-operating storage temperature –55 to 100 °C 6
RH
STG
Non-operating Storage Relative Humidity (non-condensing) 5 to 95 %
NA Change Rate of Storage Temperature 20 °C/hour
Notes:
1. Maximum operating case temperature; T
C
is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum T
C
during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
C
dur-
ing operation.
4. If T
C
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
interval refresh rate.
5. The refresh rate must double when 85°C < T
OPER
95°C.
6. Storage temperature is defined as the temperature of the top/center of the DRAM and
does not reflect the storage temperatures of shipping trays.
7. For additional information, refer to technical note TN-00-08: "Thermal Applications"
available at micron.com.
8GB (x72, ECC, SR) 288-Pin DDR4 VLP UDIMM
Electrical Specifications
PDF: CCMTD-341111752-10425
adf9c1gx72az.pdf – Rev. B 11/17 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 12: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-3G2 -062E
-2G9 -068
-2G6 -075
-2G3 -083
-2G1 -093E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, SR) 288-Pin DDR4 VLP UDIMM
DRAM Operating Conditions
PDF: CCMTD-341111752-10425
adf9c1gx72az.pdf – Rev. B 11/17 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision B)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 Units
One bank ACTIVATE-PRECHARGE current I
DD0
459 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
27 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
567 mA
Precharge standby current I
DD2N
315 mA
Precharge standby ODT current I
DD2NT
450 mA
Precharge power-down current I
DD2P
225 mA
Precharge quiet standby current I
DD2Q
270 mA
Active standby current I
DD3N
414 mA
Active standby I
PP
current I
PP3N
27 mA
Active power-down current I
DD3P
351 mA
Burst read current I
DD4R
1314 mA
Burst write current I
DD4W
1188 mA
Burst refresh current (1x REF) I
DD5R
504 mA
Burst refresh I
PP
current (1x REF) I
PP5R
45 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
270 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
315 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
180 mA
Auto self refresh current (25°C) I
DD6A
77.4 mA
Auto self refresh current (45°C) I
DD6A
180 mA
Auto self refresh current (75°C) I
DD6A
270 mA
Auto self refresh I
PP
current I
PP6X
45 mA
Bank interleave read current I
DD7
1620 mA
Bank interleave read I
PP
current I
PP7
135 mA
Maximum power-down current I
DD8
225 mA
8GB (x72, ECC, SR) 288-Pin DDR4 VLP UDIMM
I
DD
Specifications
PDF: CCMTD-341111752-10425
adf9c1gx72az.pdf – Rev. B 11/17 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

MTA9ADF1G72AZ-2G6B1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR4 8GB EUDIMM VLP
Lifecycle:
New from this manufacturer.
Delivery:
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