ESD7371P2T5G Datasheet SZESD9B5.0ST5G, SZESD9B3.3ST5G, ESD7371P2T5G | P1-P3

May, 2015 − Rev. 5

1 Publication Order Number:

ESD9B/D

ESD9B, SZESD9B

Transient Voltage

Suppressors

Micro−Packaged Diodes for ESD Protection

The ESD9B Series is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in

cellular phones, MP3 players, digital cameras and many other portable

applications where board space comes at a premium.

Specification Features

• Low Capacitance 15 pF

• Low Clamping Voltage

• Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm)

• Low Body Height: 0.016″ (0.4 mm)

• Stand−off Voltage: 3.3 V, 5 V

• Low Leakage

• Response Time is < 1 ns

• IEC61000−4−2 Level 4 ESD Protection

• AEC−Q101 Qualified and PPAP Capable

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• This is a Pb−Free Device

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Air

±18

IEC 61000−4−4 (EFT) 40 A

Total Power Dissipation on FR−5 Board

(Note 1) @ T

= 25°C

Thermal Resistance, Junction−to−Ambient

°P

300

400

°C/W

Junction and Storage Temperature Range T

, T

stg

−55 to +150 °C

Lead Solder Temperature − Maximum

(10 Second Duration)

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Device Package Shipping

†

ORDERING INFORMATION

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

www.onsemi.com

ESD9B3.3ST5G SOD−923

(Pb−Free)

8000/Tape & Ree

SOD−923

CASE 514AB

MARKING DIAGRAM

X = Specific Device Code

M Date Code

ESD9B5.0ST5G SOD−923

(Pb−Free)

8000/Tape & Ree

SZESD9B5.0ST5G SOD−923

(Pb−Free)

8000/Tape & Ree

X M

Bi−Directional TVS

RWM

ESD9B, SZESD9B

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

C Capacitance @ V

= 0 V and f = 1.0 MHz

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Device

Marking

RWM

(V)

(nA)

@ V

RWM

(V) @ I

(Note 2)

C (pF) V

(V)

Max Per 8 x 20 ms

(Note 4)

Max Max Min Max mA Typ

Per IEC61000−4−2

(Note 3)

= 1 A I

= 2 A

ESD9B3.3ST5G 2* 3.3 100 5.0 7.0 1.0 15 Figures 1 and 2

See Below

10.5 11.5

ESD9B5.0ST5G,

SZESD9B5.0ST5G

E 5.0 100 5.8 7.8 1.0 15 Figures 1 and 2

See Below

12.5 15.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

* Rotated 270°.

2. V

is measured with a pulse test current I

at an ambient temperature of 25°C.

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

4. Surge current waveforms per Figure 5.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

ESD9B, SZESD9B

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

TVS

Oscilloscope

ESD Gun

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 X 20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

P1-P3 P4-P4

ESD7371P2T5G

Mfr. #:

Buy ESD7371P2T5G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors UNIDIRECTIONAL 7V ESD PR

Lifecycle:

New from this manufacturer.

Delivery:

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ESD7371P2T5G

ESD7371P2T5G

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