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AD8009JRTZ-R2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
–3–
REV. F
AD8009
SPECIFICATIONS
(@ T
A
= 25C, V
S
= 5 V, R
L
= 100 , for R Package: R
F
= 301 for G = +1, +2,
R
F
= 200 for G = +10).
AD8009AR/JRT
Model Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V
O
= 0.2 V p-p
G = +1, R
F
= 301 Ω 630 MHz
G = +2 430 MHz
G = +10 300 MHz
Large Signal Bandwidth, V
O
= 2 V p-p G = +2 365 MHz
G = +10 250 MHz
Gain Flatness 0.1 dB, V
O
= 0.2 V p-p G = +2, R
L
= 150 Ω 65 MHz
Slew Rate G = +2, R
L
= 150 Ω, 4 V Step 2,100 V/µs
Settling Time to 0.1% G = +2, R
L
= 150 Ω, 2 V Step 10 ns
G = +10, 2 V Step 25 ns
Rise and Fall Time G = +2, R
L
= 150 Ω, 4 V Step 0.725 ns
HARMONIC/NOISE PERFORMANCE
Second Harmonic G = +2, V
O
= 2 V p-p 10 MHz –74 dBc
20 MHz –67 dBc
70 MHz –48 dBc
Third Harmonic 10 MHz –76 dBc
20 MHz –72 dBc
70 MHz –44 dBc
Input Voltage Noise f = 10 MHz 1.9 nV/√Hz
Input Current Noise f = 10 MHz, +In 46 pA/√Hz
f = 10 MHz, –In 41 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 14 mV
–Input Bias Current 50 150 ±µA
+Input Bias Voltage 50 150 ±µA
INPUT CHARACTERISTICS
Input Resistance +Input 110 kΩ
–Input 8 Ω
Input Capacitance +Input 2.6 pF
Input Common-Mode Voltage Range 1.2 to 3.8 V
Common-Mode Rejection Ratio V
CM
= 1.5 V to 3.5 V 50 52 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.1 to 3.9 V
Output Current R
L
= 10 Ω, P
D
Package = 0.7 W 175 mA
Short-Circuit Current 330 mA
POWER SUPPLY
Operating Range +5 ±6V
Quiescent Current 10 12 mA
Power Supply Rejection Ratio V
S
= 4.5 V to 5.5 V 64 70 dB
Specifications subject to change without notice.
AD8009
–4–
REV. F
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: θ
JA
= 155°C/W.
5-Lead SOT-23 Package: θ
JA
= 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction tempera-
ture of 175°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE (ⴗC)
9
0
80
2.0
1.0
0
1.5
0.5
–50
T
J
= 150 C
MAXIMUM POWER DISSIPATION (W)
706050403020100–40 –30 –20 –10
8-LEAD SOIC PACKAGE
5-LEAD SOT-23 PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature Package Package
Model Range Description Option Branding
AD8009AR –40°C to +85°C 8-Lead SOIC R-8
AD8009AR-REEL –40°C to +85°C 8-Lead SOIC R-8
AD8009AR-REEL7 –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ* –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ-REEL* –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ-REEL7* –40°C to +85°C 8-Lead SOIC R-8
AD8009JRT-R2 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRT-REEL 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRT-REEL7 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRTZ-REEL* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRTZ-REEL7* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009ACHIPS Die
*Z = Pb-free part.
–5–
REV. F
AD8009
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
10 100
3
2
1
0
–1
–6
–7
–2
–3
–4
–5
1
1000
R PACKAGE
:
R
L
= 100⍀
V
O
= 200mV p–p
G = +1, +2
:
R
F
= 301⍀
G = +10
:
R
F
= 200⍀
RT PACKAGE
:
G = +1: R
F
= 332⍀
G = +2: R
F
= 226⍀
G = +10: R
F
= 191⍀
G = +1, R
G = +10, R AND RT
G = +2, R AND RT
G = +1, RT
TPC 1. Frequency Response; G = +1, +2, +10,
R and RT Packages
GAIN (dB)
7
6
5
4
3
2
1
0
–1
–2
8
1001 100010
FREQUENCY (MHz)
G = +2
R
F
= 301⍀
R
L
= 150⍀
V
O
AS SHOWN
4V p-p
2V p-p
TPC 2. Large Signal Frequency Response; G = +2
GAIN (dB)
7
6
5
4
3
2
1
0
–1
–2
8
1001 100010
FREQUENCY (MHz)
G = +2
R
F
= 301⍀
R
L
= 150⍀
V
O
= 2V p–p
–40ⴗC
+85ⴗC
–40ⴗC
+85ⴗC
TPC 3. Large Signal Frequency Response vs.
Temperature; G = +2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
5.4
5.3
5.2
6.2
GAIN FLATNESS (dB)
FREQUENCY (MHz)
10 1001
1000
G = +2
R
F
= 301⍀
R
L
= 150⍀
V
O
= 200mV p-p
TPC 4. Gain Flatness; G = +2
FREQUENCY (MHz)
–0.3
–0.2
–0.1
0
0.1
0.2
0.3
0.4
110100 1000 10000
GAIN FLATNESS (dB)
G = +2
R
F
= 301⍀
R
L
= 150⍀
V
O
= 200mV p-p
V
S
= 5V
TPC 5. Gain Flatness; G = +2; V
S
= 5 V
GAIN (dB)
21
20
19
18
17
16
15
14
13
12
22
1001 100010
FREQUENCY (MHz)
G = +10
R
F
= 200⍀
R
L
= 100⍀
V
O
AS SHOWN
2V p-p
4V p-p
TPC 6. Large Signal Frequency Response; G = +10
Typical Performance Characteristics–
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

AD8009JRTZ-R2

Mfr. #:
Buy AD8009JRTZ-R2
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers SOT23 1GHz 5500V/uS Low Distortion Amp
Lifecycle:
New from this manufacturer.
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