NVF3055-100T1G Datasheet NTF3055-100T1G, NVF3055-100T1G, NTF3055-100T1 | P1-P3

Publication Order Number:

NTF3055−100/D

July, 2016 − Rev. 5

1

NTF3055-100,

NVF3055-100

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

• NVF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

C

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 Vdc

Drain−to−Gate Voltage (R

GS

= 10 MW)

V

DGR

60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

p

≤ 10 ms)

V

GS

± 20

± 30

Vdc

Vpk

Drain Current

− Continuous @ T

A

= 25°C

− Continuous @ T

A

= 100°C

− Single Pulse (t

p

≤ 10 ms)

I

D

I

D

I

DM

3.0

1.4

9.0

Adc

Apk

Total Power Dissipation @ T

A

= 25°C (Note 1)

Total Power Dissipation @ T

A

= 25°C (Note 2)

Derate above 25°C

P

D

2.1

1.3

0.014

W

W/°C

Operating and Storage Temperature Range T

J

, T

stg

−55

to 175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 25 Vdc, V

GS

= 10 Vdc,

I

L

(pk) = 7.0 Apk, L = 3.0 mH, V

DS

= 60 Vdc)

E

AS

74 mJ

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

R

q

JA

R

q

JA

72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 1.127 sq in).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

D

G

S

1

2

3

4

3.0 A, 60 V

R

DS(on)

= 110 mW

N−Channel

Device Package Shipping

†

ORDERING INFORMATION

SOT−223

CASE 318E

STYLE 3

MARKING

DIAGRAM

& PIN

ASSIGNMENT

www.

onsemi.com

NTF3055−100T3G SOT−223

(Pb−Free)

4000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

A = Assembly Location

WW = Work Week

3055 = Specific Device Code

G = Pb−Free Package

AWW

3055G

G

1

Gate

2

Drain

3

Source

Drain

4

(Note: Microdot may be in either location)

SOT−223

(Pb−Free)

NTF3055−100T1G

1000 / Tape &

Reel

NVF3055−100T1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

NTF3055−100, NVF3055−100

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Note 3)

(V

GS

= 0 Vdc, I

D

= 250 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

60

−

68

66

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= 60 Vdc, V

GS

= 0 Vdc)

(V

DS

= 60 Vdc, V

GS

= 0 Vdc, T

J

= 150°C)

I

DSS

−

1.0

10

mAdc

Gate−Body Leakage Current

(V

GS

= ± 20 Vdc, V

DS

= 0 Vdc)

I

GSS

− − ± 100 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(Note 3)

(V

DS

= V

GS

, I

D

= 250 mAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

3.0

6.6

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(V

GS

= 10 Vdc, I

D

= 1.5 Adc)

R

DS(on)

− 88 110

mW

Static Drain−to−Source On−Resistance (Note 3)

(V

GS

= 10 Vdc, I

D

= 3.0 Adc)

(V

GS

= 10 Vdc, I

D

= 1.5 Adc, T

J

= 150°C)

V

DS(on)

− 0.27

0.24

0.40

−

Vdc

Forward Transconductance (Note 3)

(V

DS

= 8.0 Vdc, I

D

= 1.7 Adc)

g

fs

− 3.2 − Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 V,

f = 1.0 MHz)

C

iss

− 324 455

pF

Output Capacitance C

oss

− 35 50

Transfer Capacitance C

rss

− 110 155

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(V

DD

= 30 Vdc, I

D

= 3.0 Adc,

V

GS

= 10 Vdc,

R

G

= 9.1 W) (Note 3)

t

d(on)

− 9.4 20

ns

Rise Time t

r

− 14 30

Turn−Off Delay Time t

d(off)

− 21 45

Fall Time t

f

− 13 30

Gate Charge

(V

DS

= 48 Vdc, I

D

= 3.0 Adc,

V

GS

= 10 Vdc) (Note 3)

Q

T

− 10.6 22

nC

Q

1

− 1.9 −

Q

2

− 4.2 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (I

S

= 3.0 Adc, V

GS

= 0 Vdc)

(I

S

= 3.0 Adc, V

GS

= 0 Vdc,

T

J

= 150°C) (Note 3)

V

SD

−

0.89

0.74

1.0

−

Vdc

Reverse Recovery Time

(I

S

= 3.0 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms) (Note 3)

t

rr

− 30 −

ns

t

a

− 22 −

t

b

− 8.6 −

Reverse Recovery Stored Charge Q

RR

− 0.04 −

mC

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

NTF3055−100, NVF3055−100

www.onsemi.com

3

5

0

6

1

2

3

4

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus

Gate−to−Source Voltage

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

versus Voltage

V

GS,

GATE−TO−SOURCE VOLTAGE (VOLTS)

I

D,

DRAIN CURRENT (AMPS)

T

J

= 25°C

T

J

= 100°C

T

J

= −55°C

0

0.16

0.12

0.1

0.08

0.06

0

13 6

I

D,

DRAIN CURRENT (AMPS)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

I

D,

DRAIN CURRENT (AMPS)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

V

GS

= 15 V

2.2

1.8

1.6

1.4

T

J

, JUNCTION TEMPERATURE (°C)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

−50 50250−25 75 125100

I

D

= 1.5 A

V

GS

= 10 V

0.8

0.6

150

1

10

1000

V

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

I

DSS

, LEAKAGE (nA)

04060302010 50

100

52

0

1

421

V

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

I

D,

DRAIN CURRENT (AMPS)

0

6

V

GS

= 10 V

V

GS

= 4 V

V

GS

= 4.5 V

V

GS

= 5 V

3

363.5 54 4.5 5.5

0.04

0.02

1.2

2

0

0.16

0.12

0.1

0.08

0.06

0

4653

0.04

0.02

1

175

V

GS

= 10 V

V

GS

= 8 V

T

J

= 150°C

T

J

= 100°C

T

J

= 25°C

T

J

= 25°C

T

J

= 100°C

T

J

= −55°C

V

DS

≥ 10 V

V

GS

= 0 V

4

5

3

42

T

J

= 125°C

0.14

2

V

GS

= 6 V

T

J

= −55°C

T

J

= 100°C

NVF3055-100T1G

NVF3055-100T1G

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