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DG4157EDL-T1-GE3

P1-P3P4-P6P7-P9
DG4157E
www.vishay.com
Vishay Siliconix
S18-0423-Rev. C, 23-Apr-18
1
Document Number: 75778
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Powered-off Isolation, 0.86 , 1.65 V to 5.5 V,
SPDT Analog Switch (2:1 Multiplexer)
DESCRIPTION
The DG4157E is a high performance single-pole,
double-throw (SPDT) analog switch designed for 1.65 V to
5.5 V operation with a single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance of 0.86 at a 4.5 V power
supply, low power consumption, and fast switching speeds.
The DG4157E can handle both analog and digital signals
and permits signals with amplitudes of up to V+ to be
transmitted in either direction. Its control logic inputs can go
over V+ up to 5.5 V. The control logic input high threshold is
guaranteed as low as 1.8 V over the power supply range up
to 5.5 V. It features break before make switching
performance. Its -3 dB bandwidth is typically 152 MHz.
A powered-off protection circuit is built into the switch to
prevent an abnormal current flow from COM pin to V+ during
the power-down condition. Each output pin can withstand
greater than 7 kV (human body model).
Operation temperature is specified from -40 °C to +85 °C.
The DG4157E is available in the ultra compact DFN-6L and
SC-70-6 packages.
FEATURES
• Low switch on-resistance (0.86 )
• 1.65 V to 5.5 V single supply operation
• Isolation in powered-off mode
• Guaranteed 1.8 V logic high
• Control logic inputs can go over V+
• Low charge injection (5 pC)
• Low total harmonic distortion
• Break before make switching
• Latch-up performance exceeds 300 mA per JESD 78
•ESD tested
- 7000 V human body model (JS-001)
- 1000 V charge device model (JS-002)
• Ultra compact µDFN-6L 1 mm x 1 mm x 0.35 mm package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smartphones and tablets
• Consumer and computing
• Portable instrumentation
• Medical equipment
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Available
µDFN-6L
Top view
Pin 1
Device marking: CX
X = date / lot traceability code
2 5
1
3
6
4
AB
0
V+ GND
S
B
1
CX
Pin 1
Device marking: H4XXX
XXX = date / lot traceability code
H4XXX
S
A
1
2
3
6
Top view
B
1
GND
B
0
4
SC-70-6L
5V+
TRUTH TABLE
LOGIC INPUT (S) FUNCTION
0 B
0
connected to A
1B
1
connected to A
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
SC-70-6L DG4157EDL-T1-GE3
µDFN-6L DG4157EDN-T1-GE4
DG4157E
www.vishay.com
Vishay Siliconix
S18-0423-Rev. C, 23-Apr-18
2
Document Number: 75778
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. Measured on an 1" x 1" inch FR4 board, using 0.39" by 1", 2 oz. copper trace without air flow
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
V+, A, B
0
, B
1
, S reference to GND -0.3 to 6 V
Continuous current (any terminal) ± 200
mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 400
Thermal resistance
a
407 °C/W
ESD / HBM JS-001 7000
V
ESD / CDM JS-002 1000
Latch up JESD78 300 mA
Operating temperature -40 to +85
°C
Max. operating junction temperature 150
Operating junction temperature 125
Storage temperature -65 to +150
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V
S
= 0 V or V+
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
DC Characteristics
On resistance R
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V,
I
O
= 100 mA
Room - 1.6 2
Full - - 3
V+ = 4.5 V, B
0
or B
1
= 3.5 V,
I
O
= 100 mA
Room - 0.86 1.2
Full - - 1.5
On resistance flatness R
FLATNESS
V+ = 2.7 V, B
0
or B
1
= 0.75 V, 1.5 V,
I
O
= 100 mA
Room - 0.2 -
V+ = 4.5 V, B
0
or B
1
= 1 V, 3.5 V,
I
O
= 100 mA
Room - 0.05 0.3
Full - - 0.4
On resistance match R
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V,
I
O
= 100 mA
Room - 0.003 -
V+ = 4.5 V, B
0
or B
1
= 3.5 V,
I
O
= 100 mA
Room - 0.004 0.12
Full - - 0.15
Switch off leakage current I
OFF
V+ = 5.5 V, A = 1 V, 4.5 V
B
0
or B
1
= 4.5 V, 1 V or floating
Room -3 1.36 3
nA
Full -20 - 20
Switch on leakage current I
ON
Room -4 1.4 4
Full -40 - 40
Power down leakage I
A(DP)
V+ = 0 V, V
A
= 4.5 V, V
S
= GND
Full -1 - 1 µA
Digital Control
Input, high voltage V
INH
V+ = 2.7 V to 5.5 V
Full 1.8 - -
V
Input, low voltage V
INL
Full - - 0.6
Input current I
INH
, I
INL
V
S
= 0 or V+
Full -1 - 1 µA
DG4157E
www.vishay.com
Vishay Siliconix
S18-0423-Rev. C, 23-Apr-18
3
Document Number: 75778
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, full = as determined by the operating suffix
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
c. Typical values are for design aid only, not guaranteed nor subject to production testing
d. Guarantee by design, nor subjected to production test
e. V
S
= input voltage to perform proper function
AC Characteristics
Turn-on time
d
t
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room - 27 42
ns
Full - - 47
V+ = 4.5 V, B
0
or B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room - 17 32
Full - - 35
Turn-off time
d
t
OFF
V+ = 2.7 V, B
0
or B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room - 16 32
Full - - 35
V+ = 4.5 V, B
0
or B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room - 11 28
Full - - 30
Break-before-make time
d
t
BBM
V+ = 2.7 V, B
0
= B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room
113 -
V+ = 4.5 V, B
0
= B
1
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
18 -
Charge injection
d
Q
C
L
= 1 nF, R
GEN
= 0 , V
GEN
= 0 V
Room - -5 - pC
Off isolation
d
OIRR
R
L
= 50 , f = 1 MHz
Room
--64-
dB
R
L
= 50 , f = 10 MHz
--41-
Crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room
--64-
R
L
= 50 , C
L
= 5 pF, f = 10 MHz
--41-
Bandwidth
d
BW
R
L
= 50
Room - 152 - MHz
Total harmonic distortion
d
THD
R
L
= 600 , V
SIGNAL
= 0.5 V,
f = 20 Hz to 20 kHz
Room - 0.0055 - %
Capacitance
BX port off capacitance
d
C
B(OFF)
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room
-13-
pFA port on capacitance
d
C
A(ON)
-52-
Control pin capacitance
d
C
IN
-1-
Power Supply
Quiescent supply current I+
V+ = 5.5 V, V
S
= 0 V, 5.5 V
Room - 0.0004 0.8
µA
Full - - 1
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V
S
= 0 V or V+
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
P1-P3P4-P6P7-P9

DG4157EDL-T1-GE3

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Buy DG4157EDL-T1-GE3
Manufacturer:
Vishay
Description:
IC ANALOG SWITCH SC70-6
Lifecycle:
New from this manufacturer.
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