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SE20FDHM3/H

P1-P3P4-P6
SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
Revision: 20-Apr-17
1
Document Number: 87724
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount Standard Rectifiers
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in
commercial, industrial, and automotive applications.
MECHANICAL DATA
Case: SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - for, halogen-free, and RoHS-compliant
Base P/NHM3 - for halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
200 V, 400 V, 600 V
I
FSM
35 A
V
F
at I
F
= 2.0 A (T
A
= 125 °C) 0.85 V
I
R
5 μA
T
J
max. 175 °C
Package SMF (DO-219AB)
Circuit configuration Single
Top view Bottom view
SMF (DO-219AB)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE20FD SE20FG SE20FJ UNIT
Device marking code CD CG CJ
Maximum repetitive peak reverse voltage V
RRM
200 400 600 V
Maximum DC forward current
I
F(AV)
(1)
2.0
A
I
F(AV)
(2)
1.7
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
35 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
Revision: 20-Apr-17
2
Document Number: 87724
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 2.0 A
T
A
= 25 °C
V
F
(1)
0.96 1.10
V
T
A
= 125 °C 0.85 1.00
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-5
μA
T
A
= 125 °C 7.6 100
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
920 - ns
Typical junction capacitance 4.0 V, 1 MHz C
J
13 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL SE20FD SE20FG SE20FJ UNIT
Typical thermal resistance
R
JA
(1)
130
°C/W
R
JM
(1)
20
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k V
C
H3B > 8 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SE20FJ-M3/H 0.015 H 3000 7" diameter plastic tape and reel
SE20FJ-M3/I 0.015 I 10 000 13" diameter plastic tape and reel
SE20FJHM3/H
(1)
0.015 H 3000 7" diameter plastic tape and reel
SE20FJHM3/I
(1)
0.015 I 10 000 13" diameter plastic tape and reel
SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
Revision: 20-Apr-17
3
Document Number: 87724
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
=measured on free air,
mounted on recommended PCB
T
M
measured on mounted
10 mm x 10 mm pad areas
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 0.20.40.60.8 1 1.21.41.61.8 2 2.2
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
0.50.60.70.80.91.01.11.21.31.4
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
T
A
= 175 °C
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (uA)
Percent of Rated
Peak
Reverse Voltage (%)
T
A
= 150 °C
T
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 175 °C
1
10
100
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
0.01 0.1 1 10 100 1000
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
P1-P3P4-P6

SE20FDHM3/H

Mfr. #:
Buy SE20FDHM3/H
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2A,200V ESD PROTECTION, SMF RECT
Lifecycle:
New from this manufacturer.
Delivery:
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