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MMT20303HT1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
MMT20303HT1
7
RF
Device
Data
Freescale
Semic
onductor
,
Inc
.
50
OHM
APPLICA
TION
CIRCUIT
:
50–4000
MHz,
5
VOL
T
OPERA
TION
Figure
7.
S1
1
versus
Frequency
–40
–
10
0
f,
F
REQUENCY
(MHz)
–20
–25
–30
–35
S1
1
(dB)
–15
1000
2000
4000
3000
V
DD
=5V
d
c
Figure
8.
S22
versus
Frequency
–40
–
10
0
f,
F
REQUENCY
(MHz)
–20
–25
–30
–35
S22
(dB)
–15
1000
2000
4000
3000
V
DD
=5V
d
c
S
t
a
t
e
=
111
State
=
01 1
State
=
1
10
State
=
101
S
t
a
t
e
=
111
State
=
000
State
=
1
10
State
=
101
State
=
01 1
State
=
000
–8
1
–1
–2
–4
–5
f,
F
REQUENCY
(MHz)
A
TTENUA
TION
(dB)
0
–3
–6
0
1000
2000
4000
3000
V
DD
=5V
d
c
–7
S
t
a
t
e
=
111
State
=
01 1
State
=
101
State
=
1
10
State
=
000
Attenuation
Error
Due
to
T
emperature
Major
Setting
T
emperature
Range
Attenuation
due
to
T
emperature
0d
B
–40
Ct
o8
5
C
0d
B
1d
B
0.08
dB
2d
B
0.08
dB
4d
B
0.08
dB
7d
B
0.20
dB
Figure
9.
Attenuation
versus
Frequency
8
RF
Device
Data
Freescale
Semic
onductor
,
Inc
.
MMT20303HT1
50
OHM
APPLICA
TION
CIRCUIT
:
50–4000
MHz,
5
VOL
T
OPERA
TION
–3
6
4
Figure
10.
Phase
Shift
versus
Fr
equency
3
1
0
f,
F
REQUENCY
(MHz)
PHASE
SHIFT
(
)
5
2
–1
0
1000
2000
4000
3000
V
DD
=5V
d
c
–2
52
62
60
Figure
1
1.
IIP3
versus
Frequency
56
f,
F
REQUENCY
(MHz)
IIP3
(dBm)
58
900
1350
1800
3600
2250
V
DD
=5V
d
c
54
2700
3150
30
35
34
Figure
12.
Input
P0.1dB
versus
Frequency
32
f,
F
REQUENCY
(MHz)
INPUT
P0.1dB
33
500
1000
1500
3500
2000
V
DD
=5V
d
c
31
2500
3000
State
=
1
10
State
=
000
S
t
a
t
e
=
111
State
=
101
State
=
01 1
State
=
000
S
t
a
t
e
=
111
S
t
a
t
e
=
111
MMT20303HT1
9
RF
Device
Data
Freescale
Semic
onductor
,
Inc
.
Figure
13.
PCB
Pad
Layout
for
QFN
3
3,
16
Lead
1.6
1.6
solder
pad
with
thermal
via
structure.
All
dimensions
in
mm.
x
0.70
0.30
0.50
2.00
3.40
3.0
3.0
Figure
14.
Product
Marking
MT01
WL
YW
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
MMT20303HT1
Mfr. #:
Buy MMT20303HT1
Manufacturer:
NXP / Freescale
Description:
Attenuators MMT20303H/HVQFN16///REEL 7 Q2 NDP
Lifecycle:
New from this manufacturer.
Delivery:
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MMT20303HT1