Document Number: 83645 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.6, 17-May-11 2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MCT6
Optocoupler, Phototransistor Output,
Dual Channel
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Rated forward current, DC 60 mA
Peak forward current, DC 1.0 μs pulse, 300 pps I
FM
3.0 A
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Collector current I
C
30 mA
Collector emitter breakdown voltage BV
CEO
30 V
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 2.0 mW/°C
COUPLER
Isolation test voltage V
ISO
5300 V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
M 10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Total package dissipation P
tot
400 mW
Derate linearly from 25 °C 5.33 mW/°C
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Lead soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 20 mA V
F
1.25 1.50 V
Reverse current V
R
= 3.0 V I
R
0.1 10 μA
Junction capacitance V
F
= 0 V C
j
25 pF
OUTPUT
Collector emitter breakdown voltage I
C
= 1.0 μA, I
E
= 10 μA BV
CEO
30 65 V
Emitter collector breakdown voltage I
C
= 10 A, I
E
= 10 μA BV
ECO
7.0 10 V
Collector emitter leakage current V
CE
= 10 V I
CEO
1.0 100 nA
Collector emitter capacitance V
CE
= 0 V C
CE
8.0 pF
COUPLER
Saturation voltage, collector emitter I
C
= 2.0 mA, I
F
= 16 mA V
CEsat
0.40 V
Capacitance (input to output) f = 1.0 MHz C
IO
0.5 pF
Capacitance between channels f = 1.0 MHz 0.4 pF
Bandwidth
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
150 kHz
