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DF2B7AE,H3F

P1-P3P4-P6P7-P9
DF2B7AE
1
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7AE
DF2B7AE
DF2B7AE
DF2B7AE
Start of commercial production
2016-10
1.
1.
1.
1. General
General
General
General
The DF2B7AE is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF2B7AE provides low dynamic resistance and superior protective
performance. Furthermore, the DF2B7AE is housed in an ultra-compact package (0.8 mm × 1.2 mm) to meet
applications that require a small footprint.
2.
2.
2.
2. Applications
Applications
Applications
Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3.
3.
3.
3. Features
Features
Features
Features
(1) Suitable for use with a 5 V signal line. (V
RWM
≤ 5.5 V)
(2) Protects devices with its high ESD performance.
(V
ESD
= ±30 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(R
DYN
= 0.2 Ω (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(V
C
= 11 V@I
PP
= 4 A (typ.))
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(0.8 mm × 1.2 mm size (Toshiba package name: ESC))
4.
4.
4.
4. Packaging
Packaging
Packaging
Packaging
ESC
2017-12-22
Rev.2.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation
DF2B7AE
2
5.
5.
5.
5. Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
6.
6.
6.
6. Quick Reference Data
Quick Reference Data
Quick Reference Data
Quick Reference Data
Characteristics
Working peak reverse voltage
Total capacitance
Dynamic resistance
Electrostatic discharge voltage
(IEC61000-4-2) (Contact)
Symbol
V
RWM
C
t
R
DYN
V
ESD
Note
(Note 1)
(Note 2)
(Note 3)
Test Condition
V
R
= 0 V, f = 1 MHz
Min
Typ.
8.5
0.2
Max
5.5
10
30
Unit
V
pF
Ω
kV
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between I
PP1
= 8 A and I
PP2
= 16 A.
Note 3: Criterion: No damage to devices.
2017-12-22
Rev.2.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation
DF2B7AE
3
6.1.
6.1.
6.1.
6.1. ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
Fig.
Fig.
Fig.
Fig. 6.1.1
6.1.1
6.1.1
6.1.1 +8 kV
+8 kV
+8 kV
+8 kV Fig.
Fig.
Fig.
Fig. 6.1.2
6.1.2
6.1.2
6.1.2 -8 kV
-8 kV
-8 kV
-8 kV
Fig.
Fig.
Fig.
Fig. 6.1.3
6.1.3
6.1.3
6.1.3 IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2017-12-22
Rev.2.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation
P1-P3P4-P6P7-P9

DF2B7AE,H3F

Mfr. #:
Buy DF2B7AE,H3F
Manufacturer:
Toshiba
Description:
TVS Diodes / ESD Suppressors ESD protection diode 10pF 6.8V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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