FDFS2P103 Datasheet FDFS2P103 | P1-P3

September 2001

2001 Fairchild Semiconductor Corporation

FDFS2P103 Rev C(W)

FDFS2P103

Integrated P-Channel PowerTrench







MOSFET and Schottky Diode

General Description

The FDFS2P103 combines the exceptional

performance of Fairchild's PowerTrench MOSFET

technology with a very low forward voltage drop

Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package

solution for DC to DC converters. It features a fast

switching, low gate charge MOSFET with very low on-

state resistance. The independently connected

Schottky diode allows its use in a variety of DC/DC

converter topologies.

Features

• –5.3 A, –30V R

DS(ON)

= 59 mΩ @ V

GS

= –10 V

R

DS(ON)

= 92 mΩ @ V

GS

= –4.5 V

• V

F

< 0.52 V @ 1 A (T

J

= 125°C)

V

F

< 0.57 V @ 1 A (T

J

= 25°C)

• Schottky and MOSFET incorporated into single

power surface mount SO-8 package

• Electrically independent Schottky and MOSFET

pinout for design flexibility

A

S

G

C

D

Pin 1

SO-8

81

72

63

54

A

S

G

C

D

Absolute Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

MOSFET Drain-Source Voltage

–30

V

GSS

MOSFET Gate-Source Voltage

±25

V

I

D

Drain Current – Continuous (Note 1a)

–5.3

A

– Pulsed

–20

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

1

P

D

(Note 1c)

0.9

W

T

J

, T

STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

V

RRM

Schottky Repetitive Peak Reverse Voltage 30 V

I

O

Schottky Average Forward Current (Note 1a) 1 A

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDFS2P103 FDFS2P103 13’’ 12mm 2500 units

FDFS2P103

FDFS2P103 Rev C(W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= –250 µA

–30 V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= –250 µA,Referenced to 25°C

–23

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= –24 V, V

GS

= 0 V –1

µA

I

GSSF

Gate–Body Leakage, Forward V

GS

= 25 V, V

DS

= 0 V 100 nA

I

GSSR

Gate–Body Leakage, Reverse V

GS

= –25 V, V

DS

= 0 V –100 nA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= –250 µA

–1 –1.7 –3 V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= –250 µA,Referenced to 25°C

4.5

mV/°C

R

DS(on)

Static Drain–Source

On–Resistance

V

GS

= –10 V, I

D

= –5.3 A

V

GS

= –4.5 V, I

D

= –4 A

V

GS

=–10 V, I

D

=–5.3A, T

J

=125°C

46

70

63

59

92

88

mΩ

I

D(on)

On–State Drain Current V

GS

= –10 V, V

DS

= –5 V –20 A

g

FS

Forward Transconductance V

DS

= –5V, I

D

= –5.3 A 10 S

Dynamic Characteristics

C

iss

Input Capacitance 528 pF

C

oss

Output Capacitance 132 pF

C

rss

Reverse Transfer Capacitance

V

DS

= –15 V, V

GS

= 0 V,

f = 1.0 MHz

70 pF

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time 7 14 ns

t

r

Turn–On Rise Time 13 24 ns

t

d(off)

Turn–Off Delay Time 14 25 ns

t

f

Turn–Off Fall Time

V

DD

= –15 V, I

D

= –1 A,

V

GS

= –10 V, R

GEN

= 6 Ω

9 17 ns

Q

g

Total Gate Charge 5.3 8 nC

Q

gs

Gate–Source Charge 2.2 nC

Q

gd

Gate–Drain Charge

V

DS

= –15 V, I

D

= –5.3 A,

V

GS

= –5 V

1.6 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current –1.3 A

V

SD

Drain–Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= –1.3 A (Note 2)

–0.7

–1.2

V

Schottky Diode Characteristics

I

R

Reverse Leakage V

R

= 30 V

T

J

= 25°C

15 100

µA

T

J

= 125°C

6 30 mA

V

F

Forward Voltage I

F

= 1A

T

J

= 25°C

0.41 0.57 V

T

J

= 125°C

0.32 0.52 V

FDFS2P103

FDFS2P103 Rev C(W)

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1c) 135

°C/W

R

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 40

°C/W

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 78°C/W when

mounted on a

0.5in

2

pad of 2

oz copper

b) 125°C/W when

mounted on a

0.02 in

2

pad of

2 oz copper

c) 135°C/W when

mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDFS2P103

FDFS2P103

FDFS2P103

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