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2KBP01M-E4/51

P1-P3P4-P4
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Document Number: 88532
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
I
F(AV)
2 A
V
RRM
50 V to 1000 V
I
FSM
60 A
I
R
5 µA
V
F
1.1 V
T
J
max. 165 °C
Case Style KBPM
+~~−
+
~
~
−
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Max. average forward output rectified current
at T
A
= 55 °C
I
F(AV)
2.0 A
Peak forward surge current single half
sine-wave superimposed on rated load
I
FSM
60 A
Rating for fusing (t < 8.3 ms) I
2
t 15 A
2
s
Operating junction and
storage temperature range
T
J
, T
STG
- 55 to + 165 °C
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88532
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum instantaneous forward
voltage drop per diode
3.14 A V
F
1.1 V
Maximum DC reverse current at rated
DC blocking voltage per diode
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
500
µA
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
25 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Typical thermal resistance
(1)
R
θJA
R
θJL
30
11
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
2KBP06M-E4/45 1.895 45 30 Tube
2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray
3N257-E4/45 1.895 45 30 Tube
3N257-E4/51 1.895 51 600 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
20
40
60
80
100
120
140
160
170
0
0.5
1.0
1.5
2.0
Capacitive Load
5.0
10
20
=
I
(pk)
I
(A V)
(Per Leg)
P. C . B . M o unted
with 0.47 x 0.47"
(12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
Ambient Temperature (°C)
Average Forward Output Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
10
20
30
40
50
60
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Document Number: 88532
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
P1-P3P4-P4

2KBP01M-E4/51

Mfr. #:
Buy 2KBP01M-E4/51
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 2.0 Amp 100 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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