ADG419BRM-REEL7 Datasheet ADG419BRZ, ADG419BRZ-REEL7, ADG419BRZ-REEL | P4-P6

ADG419

Rev. B | Page 3 of 16

SPECIFICATIONS

DUAL SUPPLY

V

DD

= 15 V ± 10%, V

SS

= −15 V ± 10%, V

L

= 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

B Version T Version

Parameter

1

+25°C

−40°C to

+85°C

−40°C to

+125°C +25°C

−55°C to

+125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

V

SS

to V

DD

V

SS

to V

DD

R

ON

25 25 Ω typ V

D

= ±12.5 V, I

S

= −10 mA

35 45 45 35 45 Ω max V

DD

= +13.5 V, V

SS

= −13.5 V

LEAKAGE CURRENTS V

DD

= +16.5 V, V

SS

= −16.5 V

Source Off Leakage, I

S

(Off) ±0.1 ±0.1 nA typ

V

D

= ±15.5 V, V

S

= ∓15.5 V;

see Figure 12

±0.25 ±5 ±15 ±0.25 ±15 nA max

Drain Off Leakage, I

D

(Off) ±0.1 ±0.1 nA typ

V

D

= ±15.5 V, V

S

= ∓15.5 V;

see Figure 12

±0.75 ±5 ±30 ±0.75 ±30 nA max

Channel On Leakage, I

D

, I

S

(On) ±0.4 ±0.4 nA typ V

S

= V

D

= ±15.5 V; see Figure 13

±0.75 ±5 ±30 ±0.75 ±30 nA max

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 2.4 2.4 V min

Input Low Voltage, V

INL

0.8 0.8 0.8 V max

Input Current

I

INL

or I

INH

±0.005 ±0.005 ±0.005 μA typ V

IN

= V

INL

or V

INH

±0.5 ±0.5 ±0.5 μA max

DYNAMIC CHARACTERISTICS

2

t

TRANSITION

160 200 200 145 200 ns max

R

L

= 300 Ω, C

L

= 35 pF; V

S1

= ±10 V,

V

S2

= ∓10 V; see Figure 14

Break-Before-Make Time Delay, t

D

30 30 ns typ

R

L

= 300 Ω, C

L

= 35 pF;

V

S1

= V

S2

= ±10 V; see Figure 15

5 5 ns min

Off Isolation 80 80 dB typ R

L

= 50 Ω, f = 1 MHz; see Figure 16

Channel-to-Channel Crosstalk 90 70 dB typ R

L

= 50 Ω, f = 1 MHz; see Figure 17

C

S

(Off) 6 6 pF typ f = 1 MHz

C

D

, C

S

(On) 55 55 pF typ f = 1 MHz

POWER REQUIREMENTS V

DD

= +16.5 V, V

SS

= −16.5 V

I

DD

0.0001 0.0001 μA typ V

IN

= 0 V or 5 V

1 2.5 2.5 1 2.5 μA max

I

SS

0.0001 0.0001 μA typ

1 2.5 2.5 1 2.5 μA max

I

L

0.0001 0.0001 μA typ V

L

= 5.5 V

1 2.5 2.5 1 2.5 μA max

1

Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.

2

Guaranteed by design, not subject to production test.

ADG419

Rev. B | Page 4 of 16

SINGLE SUPPLY

V

DD

= 12 V ± 10%, V

SS

= 0 V, V

L

= 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

B Version T Version

Parameter

1

+25°C

−40°C to

+85°C

−40°C to

+125°C +25°C

−55°C to

+125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to V

DD

0 to V

DD

V

R

ON

40 40 Ω typ V

D

= 3 V, 8.5 V, I

S

= −10 mA

60 70 70 Ω max V

DD

= 10.8 V

LEAKAGE CURRENT V

DD

= 13.2 V

Source OFF Leakage, I

S

(Off) ±0.1 ±0.1 nA typ

V

D

= 12.2 V/1 V, V

S

= 1 V/12.2 V;

see Figure 12

±0.25 ±5 ±15 ±0.25 ±15 nA max

Drain OFF Leakage, I

D

(Off) ±0.1 ±0.1 nA typ

V

D

= 12.2 V/1 V, V

S

= 1 V/12.2 V;

see Figure 12

±0.75 ±5 ±30 ±0.75 ±30 nA max

Channel ON Leakage, I

D

, I

S

(On) ±0.4 ±0.4 nA typ V

S

= V

D

= 12.2 V/1 V; see Figure 13

±0.75 ±5 ±30 ±0.75 ±30 nA max

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 2.4 2.4 V min

Input Low Voltage, V

INL

0.8 0.8 0.8 V max

Input Current

I

INL

or I

INH

±0.005 ±0.005 ±0.005 μA typ V

IN

= V

INL

or V

INH

±0.5 ±0.5 ±0.5 μA max

DYNAMIC CHARACTERISTICS

2

t

TRANSITION

180 250 250 170 250 ns max

R

L

= 300 Ω, C

L

= 35 pF; V

S1

= 0 V/8 V,

V

S2

= 8 V/0 V; see Figure 14

Break-Before-Make Time Delay, t

D

60 60 ns typ

R

L

= 300 Ω, C

L

= 35 pF;

V

S1

= V

S2

= 8 V; see Figure 15

Off Isolation 80 80 dB typ R

L

= 50 Ω, f = 1 MHz; see Figure 16

Channel-to-Channel Crosstalk 90 70 dB typ R

L

= 50 Ω, f = 1 MHz; see Figure 17

C

S

(Off) 13 13 pF typ f = 1 MHz

C

D

, C

S

(On) 65 65 pF typ f = 1 MHz

POWER REQUIREMENTS V

DD

= 13.2 V

I

DD

0.0001 0.0001 μA typ V

IN

= 0 V or 5 V

1 2.5 2.5 1 2.5 μA max

I

L

0.0001 0.0001 μA typ V

L

= 5.5 V

1 2.5 2.5 1 2.5 μA max

1

Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.

2

Guaranteed by design, not subject to production test.

ADG419

Rev. B | Page 5 of 16

ABSOLUTE MAXIMUM RATINGS

T

A

= 25°C unless otherwise noted.

Table 3.

Parameter Rating

V

DD

to V

SS

44 V

V

DD

to GND −0.3 V to +25 V

V

SS

to GND +0.3 V to −25 V

V

L

to GND −0.3 V to V

DD

+ 0.3 V

Analog, Digital Inputs

1

V

SS

− 2 V to V

DD

+ 2 V

or 30 mA, whichever

occurs first

Continuous Current, S or D 30 mA

Peak Current, S or D (Pulsed at 1 ms,

10% Duty-Cycle Maximum)

100 mA

Operating Temperature Range

Industrial (B Version) −40°C to +125°C

Extended (T Version) −55°C to +125°C

Storage Temperature Range −65°C to +150°C

Junction Temperature 150°C

CERDIP Package, Power Dissipation 600 mW

θ

JA

, Thermal Impedance 110°C/W

Lead Temperature, Soldering (10 sec) 300°C

PDIP Package, Power Dissipation 400 mW

θ

JA

, Thermal Impedance 100°C/W

Lead Temperature, Soldering (10 sec) 260°C

SOIC Package, Power Dissipation 400 mW

θ

JA

, Thermal Impedance 155°C/W

MSOP Package, Power Dissipation 315 mW

θ

JA

, Thermal Impedance 205°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C

Infrared (15 sec) 220°C

1

Overvoltages at IN, S or D is clamped by internal diodes. Limit current to the

maximum ratings given.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

ADG419BRM-REEL7

ADG419BRM-REEL7

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