TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385
Devices Qualified Level
2N4856 2N4857 2N4858 2N4859 2N4860 2N4861
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N4856
2N4857
2N4858
2N4859
2N4860
2N4861
Unit
Gate-Source Voltage V
GS
-40 -30 V
Drain-Source Voltage V
DS
40 30 V
Drain-Gate Voltage V
DG
40 30 V
Gate Current I
G
50 mA
Power Dissipation
T
A
= +25
0
C
(1)
T
C
= +25
0
C
(2)
P
T
0.36
1.8
W
W
Operating Junction & Storage Temperature Range T
j
, T
stg
-65 to +200
0
C
(1) Derate linearly 2.06 mW/
0
C for T
A
> 25
0
C.
(2) Derate linearly 10.3 mW/
0
C for T
C
> 25
0
C.
TO-18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Units
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0 µAdc 2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V
(BR)GSS
-40
-30
Vdc
Gate-Source “Off” State Voltage
V
DS
= 15 Vdc, I
D
= 0.5 ηAdc 2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
V
GS(on)
-4.0
-2.0
-0.8
-10
-6.0
-4.0
Vdc
Gate Reverse Current
V
DS
= 0, V
GS
= -20 Vdc 2N4856, 2N4857, 2N4858
V
DS
= 0, V
GS
= -15 Vdc 2N4859, 2N4860, 2N4861
I
GSS
-0.25
-0.25
ηA
Drain Current
V
GS
= -10 Vds, V
DS
= 15 Vdc
I
D(off)
0.25 ηA
6 Lake Street, Lawrence, MA 01841
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