© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 0
1 Publication Order Number:
DTC115EP/D
MUN5336DW1
Complementary Bias
Resistor Transistors
R1 = 100 kW, R2 = 100 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Symbol Max Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
40 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
†
MUN5336DW1T1G SOT−363 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MARKING
DIAGRAM
PIN CONNECTIONS
36 M G
G
1
6
36 = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SOT−363
CASE 419B
Q
1
Q
2
(1)(2)(3)
(6)(5)(4)
R
1
R
2
R
2
R
1
