Datasheet - production data
Features
• High speed: t
PD
= 7 ns (typ.) at V
CC
= 6 V
• Low power dissipation: I
CC
= 1 µA (max.) at
T
A
= 25 °C
• High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min.)
• Symmetrical output impedance: |I
OH
| = I
OL
=
4 mA (min)
• Balanced propagation delays: t
PLH
~= t
PHL
• Wide operating voltage range: V
CC
(OPR) =
2 V to 6 V
• Pin and function compatible with 74 series
08
• ESD performance
− CDM: 1 kV
− HBM: 2 kV
− MM: 200 V
Description
The M74HC08 is a high-speed CMOS quad dual-
input and gate fabricated with silicon gate C
2
MOS
technology.
The internal circuit is composed of two stages
including a buffer output which enables high
noise immunity and stable output.
All inputs are equipped with protection circuits to
guard against static discharge and transient
excess voltage.
Table 1: Device summary
Order code
Temperature
range
Package
Packaging
Marking
M74HC08YRM13TR
(1)
-40 °C to
+125 °C
SO14
(automotive
grade)
1
Tape and
reel
74HC08Y
M74HC08RM13TR
-55 °C to
+125 °C
SO14
Tape and
reel
74HC08
M74HC08TTR
-55 °C to
+125 °C
TSSOP14
Tape and
reel
HC08
M74HC08YTTR
1
-40 °C to
+125 °C
TSSOP14
(automotive
grade)
1
Tape and
reel
HC08Y
Notes:
(1)
Qualification and characterization according to AEC Q100 and Q003 or equivalent,
advanced screening according to AEC Q001 and Q002 or equivalent.
October 2013 DocID001885 Rev 2 1/15
This is information on a product in full production.
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