Product Standards
MOS FET
FL6L52060L
FET (P-ch.)
SBD
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for diodes.
Page
tr
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse measurement
57
ID = -1.0 A
ns
55
Unit
1
IR2 VR = 10 V 10
Typ MaxSymbol Conditions Min
IR1 VR = 5 V
Parameter
ID = -1.0 A
VDD = -10 V, VGS = -4.0 V to 0 V
mΩ
S
ID = -0.5 A, VGS = -1.8 V
12080
pF
Rise time
*2
µA
V-1.1
ns
Drain-source ON resistance
*1
Forward transfer admittance
*1
RDS(on)1
2.
Turn-off delay time
*2
td(off)
Note: 1.
Fall time
*2
tf
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
UnitTyp
-1.0 µA
VTH ID = -1.0 mA, VDS = -10 V
Turn-on delay time
*2
MaxSymbol Conditions Min
300
RDS(on)2
RDS(on)3
VDS = -20 V, VGS = 0 V
35
3.0
ID = -1.0 A, VGS = -2.5 V
100
-0.75-0.4
140
Electrical Characteristics Ta = 25 °C ± 3 °C
Short-circuit input capacitance (Common source)
Ciss
VGS =
8 V, VDS = 0 V
Gate threshold voltage
ID = -1.0 A, VGS = -4.0 V
Parameter
Drain-source surrender voltage
2
Drain-source cutoff current
Gate-source cutoff current IGSS
±10
|Yfs| ID = -1.0 A, VDS = -10 V, f = 1 kHz
of 6
VDSS ID = -1.0 mA, VGS = 0 V
-20 V
IDSS
td(on)
Crss
VDD = -10 V, VGS = 0 V to - 4.0 V
Reverse transfer capacitance (Common source)
Short-circuit output capacitance (Common source)
Coss VDS = -10 V, VGS = 0, f = 1 MHz
230
30
8
170
Forward voltage
VF1 IF = 10 mA
VF2 IF = 500 mA
6
Reverse current µA
0.4
V
0.55
