Characteristics ACST8
4/13 Doc ID 7463 Rev 9
Figure 4. On-state rms current versus
ambient temperature
(free air convection, fulle cycle)
Figure 5. Relative variation of thermal
impedance versus pulse duration
I (A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125
α=180°
TO-220
D
2
PA K
Copper surface
= 1cm
2
T (°C)
amb
K=[Z /R ]
th th
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th(j-a)
TO-220AB
TO-220FPAB
TO-220AB
TO-220FPAB
Z
th(j-c)
t (s)
p
Figure 6. Relative variation of gate trigger
current (I
GT
) and voltage (V
GT
)
versus junction temperature
Figure 7. Relative variation of holding
current (I
H
) and latching current (I
L
)
versus junction temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
I
GT
,V
GT
[T
j
]/I
GT
,V
GT
[T
j
=25 °C]
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3
I
GT
Q3
T
j
(°C)
Typical values
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
,I
L
[T
j
]/I
H
,I
L
[T
j
=25 °C]
I
H
I
L
T
j
(°C)
Figure 8. Surge peak on-state current versus
number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of
I
2
t versus sinusoidal pulse width
0
10
20
30
40
50
60
70
80
90
1 10 100 1000
I
TSM
(A)
Non repetitive
T
j
initial=25 °C
One cycle
t=20ms
Repetitive
T
C
=105 °C
Number of cycles
1
10
100
1000
0.01 0.10 1.00 10.00
I
TSM
(A), I²t (A²s)
T
j
initial=25 °C
dI/dt limitation: 100 A/µs
I
TSM
I²t
t
P
(ms)
sinusoidal pulse
with width t < 10 ms
P
