2N3055(NPN), MJ2955(PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.52
_C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS*
Collector−Emitter Sustaining Voltage (Note 1) (I
C
= 200 mAdc, I
B
= 0) V
CEO(sus)
60 − Vdc
Collector−Emitter Sustaining Voltage (Note 1) (I
C
= 200 mAdc, R
BE
= 100 W)
V
CER(sus)
70 − Vdc
Collector Cutoff Current (V
CE
= 30 Vdc, I
B
= 0) I
CEO
− 0.7 mAdc
Collector Cutoff Current
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
I
CEX
−
−
1.0
5.0
mAdc
Emitter Cutoff Current (V
BE
= 7.0 Vdc, I
C
= 0) I
EBO
− 5.0 mAdc
ON CHARACTERISTICS* (Note 1)
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
20
5.0
70
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 400 mAdc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
V
CE(sat)
− 1.1
3.0
Vdc
Base−Emitter On Voltage (I
C
= 4.0 Adc, V
CE
= 4.0 Vdc) V
BE(on)
− 1.5 Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1.0 s, Nonrepetitive)
I
s/b
2.87 − Adc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz) f
T
2.5 − MHz
*Small−Signal Current Gain (I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz) h
fe
15 120 −
*Small−Signal Current Gain Cutoff Frequency (V
CE
= 4.0 Vdc, I
C
= 1.0 Adc, f = 1.0 kHz) f
hfe
10 − kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
20
6
Figure 2. Active Region Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10 20 40 60
I
C
, COLLECTOR CURRENT (AMP)
dc
500 ms
1 ms
250 ms
50 ms
BONDING WIRE LIMIT
THERMALLY LIMITED @ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25°C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
