RCLAMP3374N.TCT

PROTECTION PRODUCTS
1
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS - RailClamp
®®
®®
®
RClamp3374N
High Power TVS for
Ethernet Interfaces
Description
Features
Circuit Diagram Pin Configuration
Revision 7/24/2012
Applications
Mechanical Characteristics
Top View
Center Tabs
Pin 1
Pin 10
LINE 1 Out
LINE 1 In
Pin 2
LINE 2 In
Pin 9
LINE 2 Out
Pin 4
LINE 3 In
Pin 7
LINE 3 Out
Pin 5
LINE 4 In
Pin 6
LINE 4 Out
and Pins 3, 8
1
5
GND
GND
GND
10
6
GND
GND
Line 1 Out
Line 2 Out
Line 3 Out
Line 4 Out
Line 1 In
Line 2 In
Line 3 In
Line 4 In
RailClamp
®
TVS diodes are specifically designed to
protect sensitive components which are connected to
high-speed data and transmission lines from overvolt-
age caused by ESD (electrostatic discharge), CDE
(cable discharge events), and EFT (electrical fast
transients).
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. The RClamp
®
3374N is designed to
replace up to two components for board level GbE
protection. Each device is designed to protect two line
pairs. This is accomplished by routing traces through
the device. When connected in this fashion, the device
can withstand a high level of surge current (40A, 8/
20us) while maintaining a low loading capacitance of
less than 5pF. The high surge capability means it can
be used in high threat environments in applications
such as Gigabit Ethernet, telecommunication lines, and
LVDS interfaces.
The RClamp3374N is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low stand-off voltages with significant reduc-
tions in leakage current and capacitance over silicon-
avalanche diode processes. It features a true operat-
ing voltage of 3.3 volts for superior protection.
The RClamp3374N is in a 10-pin SLP3020N10 pack-
age. It measures 3.0 x 2.0 x 0.60mm. The leads are
finished with lead-free NiPdAu.
Transient protection for high-speed data lines to
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 40A (8/20μs)
Array of surge rated diodes with internal TVS Diode
Qualified to AEC-Q100 Grade 1 (-45 to +125
o
C)
Protects up to eight lines
Low capacitance for high-speed interfaces
Low variation in capacitance vs. bias voltage
Low clamping voltage
Low operating voltage: 3.3V
Solid-state silicon-avalanche technology
SLP3020N10 10L package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 3.0 x 2.0 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code + Date code
Packaging : Tape and Reel
10/100/1000 Ethernet
Automotive
Central Office Equipment
LVDS Interfaces
MagJacks / Integrated Magnetics
Notebooks / Desktops / Servers
2© 2012 Semtech Corporation
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
RClamp3374N
Absolute Maximum Rating
Electrical Characteristics (T=25
o
C unless otherwise specified)
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1
P
kp
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)sμ02/8=pt(tnerruCesluPkaeP
1
I
PP
04A
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)tcatnoC(2-4-00016CEIrepDSE
V
DSE
03-/+
03-/+
Vk
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J
521+ot04-C°
erutarepmeTegarotST
GTS
051+ot55-C°
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egatloVffO-dnatSesreveRV
MWR
3.3V
egatloVhguorhT-hcnuPV
TP
I
TP
Aμ2=5.3V
egatloVkcaB-panSV
BS
I
BS
Am05=8.2V
tnerruCegakaeLesreveRI
R
V
MWR
C°52=T,V3.3=5.0Aμ
tnerruCegakaeLesreveRI
R
V
MWR
C°521=T,V3.3=1Aμ
egatloVgnipmalC
2
V
C
I
PP
t,A1=
p
sμ02/8=
dnuorGotO/IynA
5.5V
egatloVgnipmalC
2
V
C
I
PP
t,A01=
p
sμ02/8=
dnuorGotO/I1ynA
5.01V
egatloVgnipmalC
2
V
C
I
PP
t,A52=
p
sμ02/8=
dnuorGotO/IynA
81V
egatloVgnipmalC
2,1
V
C
I
PP
t,A04=
p
sμ02/8=
snipO/Iowt,eniL-ot-eniL
hcaenorehtegotdetcennoc
)1etoN(enil
52V
ecnaticapaCnoitcnuJ
2
C
j
V
R
zHM1=f,V0=
dnuorGotO/IynA
6.35Fp
V
R
zHM1=f,V0=
snipO/IneewteB
7.1Fp
Notes:
1) Ratings with 2 pins connected together per the recommended configuration (ie pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4
connected to pin 7, and pin 5 connected to pin 6).
2) Guaranteed by design (not production tested)
3
© 2012 Semtech Corporation
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
RClamp3374N
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
0.1
1
10
0.1 1 10 100 1000
Pulse Duration - tp (us)
Peak Pulse Power - P
PP
(kW)
Power Derating Curve
0
5
10
15
20
25
0 1020304050
Peak Pulse Current - Ipp (A)
Clamping Voltage - Vc(V)
I/O to GND
I/O to I/O
2 I/O to GND
2 I/O to 2 I/O
Waveform
Parameters:
tr = 8µs
td = 20µs
0
5
10
15
20
25
30
024681012
Voltage (V)
Current (A)
R
dyn
=0.23 Ohms
TLP
Parameters:
tp = 100ns
tr = 200ps
Typical TLP CharacteristicCapacitance vs. Reverse Voltage
Forward Clamping Voltage vs. Peak Pulse Current
0
5
10
15
0 1020304050
Peak Pulse Current - Ipp (A)
Clamping Voltage - Vc(V)
GND to 1 I/O
GND to 2 I/O
0.0
1.0
2.0
3.0
4.0
5.0
01234
Reverse Voltage - V
R
(V)
Capacitance - C
j
(pf)
I/O to GND
I/O to I/O
f = 1 MHz
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Ambient Temperature - T
A
(
O
C)
% of Rated Power or I
PP

RCLAMP3374N.TCT

Mfr. #:
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors RCLAMP3374N
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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