RTQ025P02
Transistor
3/4
zElectrical characteristic curves
Fig.1 Typical Transfer Characteristics
0 0.5 1.0
0.001
0.1
1
0.01
10
1.5
Gate−Source Voltage : −V
GS
[V]
Drain Current : −I
D
(A)
2.0 2.5 3.0 3.5 4.0
Ta=125
75
25
−25
°C
°C
°C
°C
VDS=−10V
pulsed
Fig.2 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
−4.0V
−4.5V
V
GS
=−4V
R
DS
(on)[mΩ]
vs.Drain Current
Ta=25 C
pulsed
Fig.3 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
vs.Drain Current
Ta=125
75
25
−25
V
GS
=−4.5V
pulsed
C
C
C
C
Fig.4 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
Ta=125
75
25
−25
R
DS
(on)[mΩ]
vs.Drain−Current
V
GS
=−4V
pulsed
C
C
C
C
Fig.5 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
Ta=125
75
25
−25
R
DS
(on)[mΩ]
vs.Drain−Current
V
GS
=−2.5V
pulsed
C
C
C
C
0 0.5
1.0
1.5
Source−Drain Voltage : −V
SD[V]
Fig.6 Reverse Drain Current vs.
0.01
Reverse Drain Current : −IDR[A]
0.1
10
1
2.0
Ta=125
75
25
-25
Source-Drain Voltage
V
GS
=0V
pulsed
C
C
C
C
0.01 0.1 1 10 100
Drain−Source Voltage : −V
DS
[V]
Fig.7 Typical Capactitance
10
100
10000
1000
vs.Drain−Source Voltage
Capacitance : C [pF]
Ciss
Coss
Crss
Ta =25 C
f=1MHz
V
GS
=0V
0.01 0.1 1 10
Drain Current : −I
D
[A]
Fig.8 Switching Characteristics
1
10
1000
100
td(off)
td(on)
tr
tf
Switching Time : t [ns]
Ta =25 C
V
DD
=−15V
V
GS
=−4.5V
R
G
=10Ω
pulsed
Fig.9 Dynamic Input Characteristics
06
0
4
8
3
Total Gate Charge : Qg[nC]
Gate-Source Voltage: -V
GS
[V]
1524
1
2
3
5
6
7
Ta =25 C
V
DD
=−15V
I
D
=−3.5V
R
G
=10Ω
pulsed
