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NE685M33-T3-A

P1-P3P4-P6
NE685M33
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories
• LOW NOISE:
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz
• INSERTION POWER GAIN:
|S21e|
2
= 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
DATA SHEET
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 9.0 V
Collector to Emitter Voltage VCEO 6.0 V
Emitter to Base Voltage VEBO 2.0 V
Collector Current IC 30 mA
Total Power Dissipation Ptot
Note
130 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER QUANTITY SUPPLYING FORM
NE685M33-A 50 pcs (Non reel) • 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
NE685M33-T3-A 10 kpcs/reel
NE685M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK FB
Marking Y2
hFE Value 75 to 150
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 100 nA
DC Current Gain hFE
Note 1
VCE = 3 V, IC = 10 mA 75 110 150 –
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 10 12 – GHz
Insertion Power Gain |S21e|
2
VCE = 3 V, IC = 10 mA, f = 2 GHz 7 11 – dB
Noise Figure NF
VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
– 1.5 2.5 dB
Reverse Transfer Capacitance Cre
Note 2
VCB = 3 V, IC = 0 mA, f = 1 MHz – 0.4 0.7 pF
NE685M33
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.70.5 0.60.4 0.8 0.9 1.0
VCE = 3V
100
10
1
0.01
0.001
0.1
0.0001
0.70.5 0.60.4 0.8 0.9 1.0
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.70.5 0.60.4 0.8 0.9 1.0
f = 1 MHz
0.5
0.2
0.1
0 2 4 6 8
10
250
200
150
100
50
0
25 50 75 100 125 150
130
0.4
0.3
40
10
20
30
0 2
4 6
8
IB = 50 A
µ
200 A
µ
300 A
µ
350 A
µ
400 A
µ
150 A
µ
100 A
µ
35
25
15
5
250 A
µ
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (ºC)
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
P1-P3P4-P6

NE685M33-T3-A

Mfr. #:
Buy NE685M33-T3-A
Manufacturer:
CEL
Description:
RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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