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IRF9630PBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91084
4 S11-0513-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9630, SiHF9630
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1200
1000
800
600
0
200
400
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91084_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
5
25
2015
10
V
DS
= - 40 V
V
DS
= - 100 V
For test circuit
see figure 13
V
DS
= - 160 V
91084_06
I
D
= - 6.5 A
30
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
25
10
3
91084_08
10
3
Document Number: 91084 www.vishay.com
S11-0513-Rev. C, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9630, SiHF9630
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
- I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
91084_09
15025 1251007550
7.0
6.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91084_11
0.1
D = 0.5
www.vishay.com Document Number: 91084
6 S11-0513-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9630, SiHF9630
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
- 10 V
Var y t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
1200
0
200
400
600
800
1000
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
- 2.9 A
- 4.1 A
- 6.5 A
V
DD
= - 50 V
91084_12c
25 150
125
10075
50
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRF9630PBF

Mfr. #:
Buy IRF9630PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH -200V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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