SMBJ3V3-M3/52

SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-2018
1
Document Number: 89419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB
®
Transient Voltage Suppressors
FEATURES
Uni-directional polarity only
Peak pulse power: 600 W (10/1000 μs)
Excellent clamping capability
Very fast response time
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Notes
(1)
Non-repetitive current pulse, per fig. 1
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
V
WM
3.3 V
V
BR
(uni-directional) 4.1 V
P
PPM
600 W
I
FSM
60 A
T
J
max. 175 °C
Polarity Uni-directional
Package SMB (DO-214AA)
SMB (DO-214AA)
MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation P
PPM
(1)(2)
600 W
Peak pulse current with a 10/1000 μs waveform (fig. 1) I
PP
50 A
Peak pulse current with a 8/20 μs waveform (fig. 1) I
PPM
200 A
Non-repetitive peak forward surge current 8.3 ms single half sine-wave I
FSM
(2)
60 A
Power dissipation on infinite heatsink, T
L
= 75 °C P
D
5W
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
AT V
WM
STAND-OFF
VOLTAGE
V
WM
MAXIMUM
CLAMPING
VOLTAGE
V
C
AT I
PP
10/1000 μs
MAXIMUM
CLAMPING
VOLTAGE
V
C
AT I
PPM
8/20 μs
TYPICAL
TEMPERATURE
COEFFICIENT
OF V
BR
TYPICAL
JUNCTION
CAPACITANCE
C
J
AT 0 V
1 MHz
MIN.
VmA μA V VAVA10
-4
/°C pF
SMBJ3V3 KC 4.1 1.0 200 3.3 7.3 50 10.3 200 -5.3 5200
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-2018
2
Document Number: 89419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Thermal resistance from junction to lead - mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Pulse Waveform
Fig. 2 - Peak Pulse Power Rating Curve
Fig. 3 - Relative Variation of Leakage Current vs.
Junction Temperature
Fig. 4 - Clamping Voltage vs. Peak Pulse Current
(T
J
initial = 25 °C)
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to lead R
JL
(1)
20 °C/W
Typical thermal resistance, junction to ambient R
JA
(2)
100 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMBJ3V3-M3/52 0.096 52 750 7" diameter plastic tape and reel
SMBJ3V3-M3/5B 0.096 5B 3200 13" diameter plastic tape and reel
0
50
100
150
t
d
0
1.0
2.0
3.0 4.0
t
r
= 8 µs
t
r
= 10 µs
I
PPM
- Peak Pulse Current, % I
RSM
t - Time (ms)
t
d
= 1000 µs
t
d
= 20 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
1
0.1
0.01 0.1 1 10
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (ms)
0.1
1
10
0 25 50 75 100 125 150 175
T
J
- Junction TemperatureC)
I
R
(T
J
)/I
R
(T
J
= 25 °C)
4
6
8
10
0.1 1 10 100 1000
I
PP
(A)
Clamping Voltage (V)
10/1000 µs
8/20 µs
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-2018
3
Document Number: 89419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Peak Forward Voltage Drop vs. Peak
Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
2000
2500
3000
3500
4000
4500
5000
5500
0 0.5 1 1.5 2 2.5 3 3.5
Reverse Volta
g
e (V)
C
J
- Junction Capacitance (pF)
100
10
0.01 0.1 1
1
10 100 1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
F
- Forward Voltage Drop (V)
I
F
- Peak Forward Current (A)
T
J
= 175 °C
T
J
= 25 °C
SMB (DO-214AA) Mounting Pad Layout
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
0.220 REF.
0.060 (1.52)
MIN.
0.086 (2.18)
MIN.
0.085 (2.159)
MAX.

SMBJ3V3-M3/52

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 3V3V 1000W UniDir TransZorb 5% Tol
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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