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Document Number: 67196
S10-2761-Rev. A, 29-Nov-10
Vishay Siliconix
SiR826DP
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
80 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
34
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 6.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.2 2.8 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V
1
µA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0040 0.0048
V
GS
= 7.5 V, I
D
= 20 A
0.0043 0.0052
V
GS
= 4.5 V, I
D
= 15 A
0.0054 0.0065
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 20 A
80 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
2900
pFOutput Capacitance
C
oss
1870
Reverse Transfer Capacitance
C
rss
130
Total Gate Charge
Q
g
V
DS
= 40 V, V
GS
= 10 V, I
D
= 20 A
60 90
nC
V
DS
= 40 V, V
GS
= 7.5 V, I
D
= 20 A
45.5 69
V
DS
= 40 V, V
GS
= 4.5 V, I
D
= 20 A
27.9 42
Gate-Source Charge
Q
gs
8.5
Gate-Drain Charge
Q
gd
12
Gate Resistance
R
g
f = 1 MHz 0.3 0.95 1.9
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 40 V, R
L
= 2
I
D
20 A, V
GEN
= 10 V, R
g
= 1
12 24
ns
Rise Time
t
r
11 22
Turn-Off Delay Time
t
d(off)
36 70
Fall Time
t
f
816
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 40 V, R
L
= 2
I
D
20 A, V
GEN
= 7.5 V, R
g
= 1
15 30
Rise Time
t
r
14 28
Turn-Off Delay Time
t
d(off)
36 70
Fall Time
t
f
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
60
A
Pulse Diode Forward Current
a
I
SM
100
Body Diode Voltage
V
SD
I
S
= 5 A
0.74 1.1 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
65 130 ns
Body Diode Reverse Recovery Charge
Q
rr
78 155 nC
Reverse Recovery Fall Time
t
a
25
ns
Reverse Recovery Rise Time
t
b
40
