Approx. Weight: 0.008 gram
Rating Symbol Value Units
Continuous Reverse Voltage
V
R
100
V
DC
Peak Forward Current
I
F
200 mAdc
Peak Forward Surge Current
I
FM (surge)
500 mAdc
Characteristic Symbol Max Units
Total Device Dissipation FR– 5 Board(1) T
A
= 25°C
225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient
R
θJA
556 °C/W
Total Device Dissipation Alumina Substrate,(2) T
A
= 25°C
300 mW
Derate above 25°C 2.4
mW/°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150
°C
Characteristic (OFF CHARACTERISTICS) Symbol
Min
Max Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc ) V
(BR)
100
- Vdc
Reverse Voltage Leakage Current V
R
= 50 Vdc I
R
-
1
V
R
= 100 Vdc I
R2
-
3
V
R
= 50 Vdc, 125°C I
R3
-
100
Forward Voltage I
F
= 1.0 mAdc
0.55
0.7
I
F
= 10 mAdc
0.67
0.82
I
F
= 100 mAdc
0.75
1.1
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1)
Trr
4.0
nS
Diode Capacitance (V
R
= 0)
C
- 1.5
pF
Maximum Ratings
Thermal Characteristics
P
D
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
P
D
Electrical Characterics (TA = 25°C unless otherwise noted)
uAdc
V
F
Vdc
