© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1 Publication Order Number:
NTTFS4985NF/D
NTTFS4985NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated Schottky Diode
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
22
A
T
A
= 85°C 15.9
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C P
D
2.69 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
32.4
A
T
A
= 85°C 23.4
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
5.85 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
16.3
A
T
A
= 85°C 11.7
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.47 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
64
A
T
C
= 85°C 46
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
22.73 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
192 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+150
°C
Source Current (Body Diode) I
S
32 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 32 A
pk
, L = 0.1 mH, R
G
= 25 W)
E
AS
52 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm
2
.
ORDERING INFORMATION
www.onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
30 V
3.5 mW @ 10 V
64 A
N−Channel MOSFET
D
S
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
5.2 mW @ 4.5 V
NTTFS4985NFTAG WDFN8
(Pb−Free)
1500 / Tape &
Reel
(Note: Microdot may be in either location)
1
4985 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
4985
AYWWG
G
D
D
D
D
S
S
S
G
