PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 3 of 8
NXP Semiconductors
PMEG2005AEL
0.5 A ultra low V
F
MEGA Schottky rectifier
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
6. Thermal characteristics
[1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to
ambient
in free air
[1][2]
500 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Typ Max Unit
V
F
continuous forward
voltage
see Figure 1;
I
F
= 0.1 mA 25 60 mV
I
F
=1mA 75 110 mV
I
F
= 10 mA 135 190 mV
I
F
= 100 mA 220 290 mV
I
F
= 500 mA 375 440 mV
I
R
continuous reverse
current
see Figure 2;
[1]
V
R
= 10 V 210 600 μA
V
R
= 20 V 370 1500 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz;
see Figure 3
19 25 pF
