SE1450-003L Datasheet SE1450-003L, SE1450-001L, SE1450-004 | P1-P3

GaAs Infrared Emitting Diode

SE1450

DESCRIPTION

FEATURES

Compact, metal can coaxial package

•

24¡ (nominal) beam angle

•

935 nm wavelength

•

Wide operating temperature range

(-55¡C to +125¡C)

•

Mechanically and spectrally matched to SD1420

photodiode, SD1440 phototransistor and

SD1410 photodarlington

•

The SE1450 is a gallium arsenide infrared emitting

diode mounted in a glass lensed, metal can coaxial

package. The package may have a tab or second lead

welded to the can as an optional feature

(SE1450-XXXL). Both leads are flexible and may be

formed as required to fit various mounting

configurations.

INFRA-63.TIF

OUTLINE DIMENSIONS

in inches (mm)

3 plc decimals

±0.005(0.12)

Tolerance

2 plc decimals

±0.020(0.51)

.106(2.69)

DIA

.076(1.93)

ANODE

MIN

.095(2.41) DIA

.020(0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

CATHODE (CASE)

DIM_001a.ds4

SE1450-XXX

.106(2.69)

DIA

.076(1.93)

ANODE

CATHODE

TYPICAL MIN

.095(2.41) DIA

.020

(0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

.020

(0.51) DIA

~

DIM_001b.ds4

SE1450-XXXL

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

h

8

GaAs Infrared Emitting Diode

SE1450

ELECTRICAL CHARACTERISTICS

UNITS

TEST CONDITIONS

MIN

PARAMETER

SYMBOL

TYP

MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current

50 mA

Power Dissipation

75 mW [À]

Operating Temperature Range

-55¡C to 125¡C

Storage Temperature Range

-65¡C to 150¡C

Soldering Temperature (10 sec)

260¡C

Notes

1. Derate linearly from 25¡C free-air temperature at the rate of

0.71 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

h

9

GaAs Infrared Emitting Diode

SE1450

Radiant Intensity vs

Angular Displacement

gra_001.ds4

Angular displacement - degrees

R

e

l

a

t

i

v

e

i

n

t

e

n

s

i

t

y

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vs

Forward Current

gra_002.ds4

Forward current - mA

N

o

r

m

a

l

i

z

e

d

r

a

d

i

a

n

t

i

n

t

e

n

s

i

t

y

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 10.0 20.0 30.0 40.0 50.0

Fig. 2

Forward Voltage vs

Forward Current

gra_003.ds4

Forward current - mA

F

o

r

w

a

r

d

v

o

l

t

a

g

e

-

V

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

0 20 40 60

Fig. 3 Forward Voltage vs

Temperature

gra_200.ds4

Temperature - °C

F

o

r

w

a

r

d

v

o

l

t

a

g

e

-

V

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

-50 -25 0 25 50 75 100 125

I

F

= 20 mA

Fig. 4

Spectral Bandwidth

gra_005.ds4

Wavelength - nm

R

e

l

a

t

i

v

e

i

n

t

e

n

s

i

t

y

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Coupling Characteristics

with SD1440

gra_006.ds4

Lens-to-lens separation - inches

N

o

r

m

a

l

i

z

e

d

l

i

g

h

t

c

u

r

e

n

t

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 6

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

h

10

SE1450-003L

SE1450-003L

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