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BSO201SPHXUMA1

P1-P3P4-P6P7-P9
BSO201SP H
OptiMOS
®
P-Power-Transistor
Features
• single P-Channel in SO8
• Qualified according JEDEC
1)
for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current
1)
I
D
V
GS
=4.5 V, T
A
=25 °C
14.9 12.0 A
V
GS
=4.5 V, T
A
=70 °C
11.9 9.4
V
GS
=2.5 V, T
A
=25 °C
11.8 9.3
V
GS
=2.5 V, T
A
=70 °C
9.4 7.4
Pulsed drain current
2)
I
D,pulse
T
A
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=-14.9 A, R
GS
=25 Ω
mJ
Gate source voltage
V
GS
V
Power dissipation
1)
P
tot
T
A
=25 °C
2.5 1.6 W
Operating and storage temperature
T
j
, T
stg
°C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
260
1C (< 2 kV)
55/150/56
±12
-55 ... 150
Value
59.6
248
Type Package Marking
BSO201SP H PG-DSO-8 201SP
PG-DSO-8
V
DS
-20 V
R
DS(on),max
V
GS
=4.5 V 8.0
mΩ
V
GS
=2.5 V 12.9
I
D
-14.9 A
Product Summary
Lead free
Packing
Yes dry
Halogen free
Yes
Rev.1.32 page 1 2009-12-21
BSO201SP H
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point
R
thJS
- - 35 K/W
Thermal resistance,
junction - ambient
R
thJA
minimal footprint,
t
p
≤10 s
- - 110
minimal footprint,
steady state
- - 150
6 cm
2
cooling area
1)
,
t
p
≤10 s
--50
6 cm
2
cooling area
1)
,
steady state
--80
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= -
0.25 mA
-20 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
= -250 µA
-0.6 -0.9 -1.2
Zero gate voltage drain current
I
DSS
V
DS
=-20 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=-20 V, V
GS
=0 V,
T
j
=150 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
= -12 V, V
DS
=0 V
- - -100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=2.5 V, I
D
=-11.8 A
- 10.3 12.9
mΩ
V
GS
=4.5 V, I
D
=-14.9 A
- 6.7 8.0
Gate resistance
R
G
- 3.8 -
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-11.8 A
40 71 - S
3)
See figure 13 for more detailed information
Values
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
Rev.1.32 page 2 2009-12-21
BSO201SP H
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 6400 9600 pF
Output capacitance
C
oss
- 2100 3150
Reverse transfer capacitance
C
rss
- 1700 2550
Turn-on delay time
t
d(on)
-2132ns
Rise time
t
r
- 99 149
Turn-off delay time
t
d(off)
- 99 149
Fall time
t
f
- 162 243
Gate Char
g
e Characteristics
4)
Gate to source charge
Q
gs
- -10 -15 nC
Gate charge at threshold
Q
g(th)
- -6 -16
Gate to drain charge
Q
gd
- -23 -39
Switching charge
Q
sw
- -26 -38
Gate charge total
Q
g
- -66 -88
Gate plateau voltage
V
plateau
- -1.5 - V
Output charge
Q
oss
V
DD
=-10 V, V
GS
=0 V
-3851nC
Reverse Diode
Diode continuous forward current
I
S
- - -3.7 A
Diode pulse current
I
S,pulse
- - -59.6
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=-14.9 A,
T
j
=25 °C
- - 1.2 V
Reverse recovery time
t
rr
V
R
=10 V, I
F
=I
S
,
di
F
/dt =100 A/µs
- - 95 ns
Reverse recovery charge
Q
rr
V
R
=10 V, I
F
=I
S
,
di
F
/dt =100 A/µs
- - 109 nC
4)
See figure 16 for gate charge parameter definition
T
A
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=-10 V,
V
GS
=4.5 V, I
D
=-
14.9 A, R
G
=1.6 Ω
V
DD
=-10 V, I
D
=-
14.9 A, V
GS
=0 to 4.5 V
Rev.1.32 page 3 2009-12-21
P1-P3P4-P6P7-P9

BSO201SPHXUMA1

Mfr. #:
Buy BSO201SPHXUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P
Lifecycle:
New from this manufacturer.
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