PMEG4002EL_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 March 2009 3 of 8
NXP Semiconductors
PMEG4002EL
40 V, 0.2 A low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
[1] Refer to SOD882 standard mounting conditions (footprint), FR4 Printed-Circuit Board (PCB) with
60 µm copper strip line.
[2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
- - 500 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 mA 190 220 mV
I
F
= 1 mA 250 290 mV
I
F
= 10 mA 320 360 mV
I
F
= 100 mA 440 500 mV
I
F
= 200 mA 520 600 mV
I
R
reverse current
[1]
V
R
= 25 V 0.3 0.5 µA
V
R
= 40 V 0.7 10 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz 14 20 pF
