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STTH1002CT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
This is information on a product in full production.
September 2016 DocID10182 Rev 8 1/17
STTH1002C
High efficiency ultrafast diode
Datasheet - production data
Features
Suited for SMPS
Low losses
Low forward and reverse recovery times
Insulated package: TO-220FPAB
– Insulating voltage: 2000 V
RMS
sine
High junction temperature
Low leakage current
ECOPACK
®
2 compliant component for DPAK
and D²PAK on demand
Description
Dual center tap rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in DPAK, D²PAK, TO-220AB, I²PAK
and TO-220FPAB, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
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Table 1. Device summary
Symbol Value
I
F(AV)
Up to 2 x 8 A
V
RRM
200 V
T
j
(max) 175 °C
V
F
(typ) 0.78 V
t
rr
(typ) 20 ns
www.st.com
Characteristics STTH1002C
2/17 DocID10182 Rev 8
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
Forward rms current
I
2
PAK, D
2
PAK,TO-220AB, TO-220FPAB 20
A
DPAK 10
I
F(AV)
Average forward current
= 0.5, square wave
I
2
PAK, DPAK,
D
2
PAK,TO-220AB
T
c
= 155 °C Per diode 5
A
T
c
= 150 °C Per device 10
T
c
= 135 °C Per diode 8
T
c
= 125 °C Per device 16
TO-220FPAB
T
c
= 140 °C Per diode 5
T
c
= 120 °C Per device 10
T
c
= 110 °C Per diode 8
T
c
= 75 °C Per device 16
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
50 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal parameter
Symbol Parameter Max. value Unit
R
th(j-c)
Junction to case
I
2
PAK, DPAK, D
2
PAK,TO-220AB
Per diode 4.0
°C/W
Per device 2.5
TO-220FPAB
Per diode 6.5
Per device 5.0
R
th(c)
Coupling
I
2
PAK, DPAK, D
2
PAK,TO-220AB 1.0
TO-220FPAB 3.5
DocID10182 Rev 8 3/17
STTH1002C Characteristics
17
To evaluate the conduction losses, use the following equation:
P = 0.73 x I
F(AV)
+ 0.032 x I
F
2
(RMS)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-5
µA
T
j
= 125 °C - 3 40
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A - 1.10
V
I
F
= 10 A - 1.25
T
j
= 150 °C
I
F
= 5 A - 0.78 0.89
I
F
= 10 A - 1.05
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
Table 5. Dynamic electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 1 A
V
R
= 30 V
dI
F
/dt = 100 A/µs
-2025ns
I
RM
Reverse recovery
current
T
j
= 125 °C
I
F
= 5 A
V
R
= 160 V
dI
F
/dt = 200 A/µs
-5.97.6A
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 5 A
V
FR
= 1.1 x V
Fmax
dI
F
/dt = 100 A/µs
- 110 ns
V
FP
Forward recovery
voltage
I
F
= 5 A
dI
F
/dt = 100 A/µs
-2.4 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STTH1002CT

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Manufacturer:
STMicroelectronics
Description:
Rectifiers 2x8 Amp 200 Volt
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