ATA5577M1330C-DDT

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4967DS–RFID–10/08
ATA5577
4.9 Mode Register
The mode register maintains a readable shadow copy of the configuration data held in block 0 of
the EEPROM. It is continually refreshed during read mode and (re-)loaded after every POR
event or reset command. On delivery, the mode register is pre-programmed with default values
(see full version of the datasheet).
4.10 Modulator
The modulator encodes the serialized EEPROM data for transmission to a tag reader or base
station. Several types of modulation are available including Manchester, bi-phase, FSK, PSK,
and NRZ.
4.11 Memory
The memory is a 363-bit EEPROM, which is arranged in 11 blocks of 33 bits each. Each block
includes a single Lock bit, which is responsible for write-protecting the associated block. Pro-
gramming takes place on a block basis, so a complete block (including lock bit) can be
programmed with a single command. The memory is subdivided into two page areas. Page 0
contains 8 blocks and page 1 contains 4 blocks. All 33 bits of a block, including the lock bit, are
programmed simultaneously.
Figure 4-2. Memory Map
0 1.........................................................................................32
Page 1
L Analog front end option set-up Block 3
1 Traceability data Block 2
1 Traceability data Block 1
L Page 0 configuration data Block 0
Page 0
L User data or password Block 7
L User data Block 6
L User data Block 5
L User data Block 4
L User data Block 3
L User data Block 2
L User data Block 1
L Configuration data Block 0
32 bits
Not transmitted
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4967DS–RFID–10/08
ATA5577
Block 0 of page 0 contains the mode/configuration data, which is not transmitted during regular
read operations. Addressing block 0 will always affect block 0 of page 0 regardless of the page
selector. Block 7 of page 0 may be used as a write-protection password.
Block 3 of page 1 contains the option register, which is not transmitted during regular-read
operation.
Bit 0 of every block is the lock bit for that block. Once locked, the block (including the lock bit
itself) is not re-programmable via the RF field.
Blocks 1 and 2 of page 1 contain traceability data and are transmitted with the modulation
parameters defined in the configuration register after the opcode “11” is issued by the reader.
The traceability data blocks are programmed and locked by Atmel.
5. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters Symbol Value Unit
Maximum DC current into Coil1/Coil2 I
coil
20 (TBD) mA
Maximum AC current into Coil1/Coil2, f = 125 kHz I
coil p
20 (TBD) mA
Power dissipation (die) (free-air condition, time of
application: 1s)
P
tot
100 (TBD) mW
Electrostatic discharge maximum to
ANSI/ESD-STM5.1-2001 standard (HBM)
V
max
2000 (TBD) V
Operating ambient temperature range T
amb
–40 to +85 °C
Storage temperature range (data retention
reduced)
T
stg
–40 to +150 °C
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6. Electrical Characteristics
T
amb
= +25°C; f
coil
= 125 kHz; unless otherwise specified
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit Type*
1 RF frequency range f
RF
100 125 150 kHz
2.1
Supply current (without
current consumed by the
external LC tank circuit)
T
amb
= 25°C
(1)
I
DD
1.5 TBD µA T
2.2
Read - full temperature
range
2TBDµA Q
2.3
Programming - full
temperature range
25 TBD µA Q
3.1
Coil voltage (AC supply)
POR threshold (50-mV
hysteresis)
V
coil pp
TBD 3.6 TBD V Q
3.2
Read mode and write
command
(2)
6V
clamp
VQ
3.3 Program EEPROM
(2)
8V
clamp
VQ
4 Start-up time V
coil pp
= 6V t
startup
2.5 TBD ms Q
5.1
Clamp voltage (depends
on settings in option
register)
3-mA current into
Coil1/Coil2
V
pp clamp lo
TBD 11 TBD V Q
5.2 V
pp clamp med
TBD 13 TBD V Q
5.3 V
pp clamp hi
TBD 17 TBD V T
5.4
20-mA current into
Coil1/Coil2
V
pp clamp med
TBD 15 TBD V T
6.1
Modulation parameters
(depends on settings in
option register)
3-mA current into
Coil1/Coil2 and
modulation ON
V
pp mod lo
TBD 3 TBD V T
6.2 V
pp mod med
TBD 5 TBD V Q
6.3 V
pp mod hi
TBD 7 TBD V Q
6.4
20 mA current into
Coil1/Coil2 and
modulation ON
V
pp mod med
TBD 7.5 TBD V T
6.5 Thermal stability V
mod lo
/T
amb
–1 mV/°C Q
7.1
Clock detection level
(depends on settings in
option register)
V
coil pp
= 8V
V
clkdet lo
TBD 250 TBD mV Q
7.2 V
clkdet med
TBD 550 TBD mV T
7.3 V
clkdet hi
TBD 800 TBD mV Q
7.4
Gap detection level
(depends on settings in
option register)
V
coil pp
= 8 V
V
gapdet lo
TBD 250 TBD mV Q
7.5 V
gapdet med
TBD 550 TBD mV T
7.6 V
gapdet hi
TBD 850 TBD mV Q
8 Programming time
From last command gap
to re-enter read mode
(64 + 648 internal
clocks)
T
prog
55.76msT
9 Endurance Erase all/Write all
(3)
n
cycle
100000 Cycles Q
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes: 1. I
DD
measurement set-up R = 100kΩ; V
CLK
= V
coil
= 3V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
– V
CLK
)/R
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
uncut wafer) delivery.

ATA5577M1330C-DDT

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
RFID Transponders LF-RFID IDIC 330bit, r/w, 330pF)
Lifecycle:
New from this manufacturer.
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