JDH2S02FS
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS
UHF Band Mixer
• Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
R
10 V
Forward current I
F
10 mA
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage V
F
I
F
= 1 mA ⎯ 0.24 ⎯ V
Forward current I
F
V
F
= 0.5 V 2 ⎯ ⎯ mA
Reverse current I
R
V
R
= 0.5 V ⎯ ⎯ 25 μA
Capacitance C
T
V
R
= 0.2 V, f = 1 MHz ⎯ 0.3 ⎯ pF
Note: Signal level when capacitance is measured: Vsig = 20 mV
rms
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-1L1A
Weight: 0.0006 g (typ.)
0.8±0.05
0.2
1.0±0.05
0.1±0.05
0.6±0.05
ｶｿｰﾄ
ﾏｰｸ
0.1
0.1
A
0.48
+0.02
-0.03
±0.05
A
M
0.07
T
Start of commercial production
2004-09
