STPS60L45CW

1/4
STPS60L45CW
July 2003 - Ed: 3C
LOW DROP POWER SCHOTTKY RECTIFIER
®
Dual center tap schottky barrier rectifier suited for
5V output in off line AC/DC power supplies.
Packaged in TO-247, this device is intended for
use in low voltage, high frequency converters, free
wheeling and polarity protection applications.
DESCRIPTION
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
45 V
I
F(RMS)
RMS forward current
50 A
I
F(AV)
Average forward current Tc = 135°C
δ = 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
600 A
I
RRM
Repetitive peak reverse current tp=2µs square F=1kHz
2A
I
RSM
Non repetitive peak reverse current tp = 100 µs square
4A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C
12300 W
T
stg
Storage temperature range
- 65 to + 150 °C
Tj
Maximum operating junction temperature (*)
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2x30A
Tj (max) 150°C
V
RRM
45 V
V
F
(max) 0.50 V
MAJOR PRODUCTS CHARACTERISTICS
TO-247
A1
K
A2
*:
dPtot
dTj Rth j a
<
1
()
thermal runaway condition for a diode on its own heatsink
STPS60L45CW
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Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25°C V
R
=45V
1.5 mA
Tj = 125°C
175 350
V
F
*
Forward voltage drop Tj = 25°CI
F
=30A
0.55 V
Tj = 125°C I
F
=30A
0.44 0.5
Tj=25°CI
F
=60A
0.73
Tj = 125°C I
F
=60A
0.64 0.72
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.28xI
F(AV)
+ 0.0073 I
F
2
(RMS)
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
14
16
18
20
22
PF(av)(W)
IF(av) (A)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
IF(av)(A)
Tamb(°C)
T
δ
=tp/T
tp
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
0.75
0.42
°C/W
R
th (c)
Coupling
0.1 °C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS60L45CW
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0 5 10 15 20 25 30 35 40 45
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
VR(V)
IR(mA)
Tj=100°C
Tj=125°C
Tj=25°C
Tj=150°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
12 51020 50
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
200
VFM(V)
IFM(A)
Typical values
Tj=150°C
Maximum values
Tj=125°C
Maximum values
Tj=100°C
Maximum values
Tj=25°C
Fig. 9: Forward voltage drop versus forward
current (per diode).
1E-3 1E-2 1E-1 1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=125°C
Tc=75°C
Tc=25°C
IM
t
δ=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.

STPS60L45CW

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X30 Amp 45 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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