CY7C1041B-15VC

CY7C1041B
Document #: 38-05142 Rev. *A Page 4 of 11
Switching Characteristics
[4]
Over the Operating Range
7C1041B-12 7C1041B-15 7C1041B-17
Parameter Description Min. Max. Min. Max. Min. Max. Unit
Read Cycle
t
power
V
CC
(typical) to the First Access
[5]
111µs
t
RC
Read Cycle Time 12 15 17 ns
t
AA
Address to Data Valid 12 15 17 ns
t
OHA
Data Hold from Address Change 3 3 3 ns
t
ACE
CE LOW to Data Valid 12 15 17 ns
t
DOE
OE LOW to Data Valid 6 7 7 ns
t
LZOE
OE LOW to Low Z 0 0 0 ns
t
HZOE
OE HIGH to High Z
[6, 7]
677ns
t
LZCE
CE LOW to Low Z
[7]
333ns
t
HZCE
CE HIGH to High Z
[6, 7]
677ns
t
PU
CE LOW to Power-Up 0 0 0 ns
t
PD
CE HIGH to Power-Down 12 15 17 ns
t
DBE
Byte Enable to Data Valid 6 7 7 ns
t
LZBE
Byte Enable to Low Z 0 0 0 ns
t
HZBE
Byte Disable to High Z 6 7 7 ns
Write Cycle
[8, 9]
t
WC
Write Cycle Time 12 15 17 ns
t
SCE
CE LOW to Write End 10 12 14 ns
t
AW
Address Set-Up to Write End 10 12 14 ns
t
HA
Address Hold from Write End 0 0 0 ns
t
SA
Address Set-Up to Write Start 0 0 0 ns
t
PWE
WE Pulse Width 101214ns
t
SD
Data Set-Up to Write End 7 8 8 ns
t
HD
Data Hold from Write End 0 0 0 ns
t
LZWE
WE HIGH to Low Z
[7]
333ns
t
HZWE
WE LOW to High Z
[6, 7]
677ns
t
BW
Byte Enable to End of Write 10 12 12 ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. t
power
time has to be provided initially before a read/write operation is
started.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. The internal write time of the memory is defined by the overlap of CE
LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
[+] Feedback
CY7C1041B
Document #: 38-05142 Rev. *A Page 5 of 11
Switching Characteristics
[4]
Over the Operating Range (continued)
Parameter Description
7C1041B-20 7C1041B-25
UnitMin. Max. Min. Max.
Read Cycle
t
power
V
CC
(typical) to the First Access
[5]
11µs
t
RC
Read Cycle Time 20 25 ns
t
AA
Address to Data Valid 20 25 ns
t
OHA
Data Hold from Address Change 3 5 ns
t
ACE
CE LOW to Data Valid 20 25 ns
t
DOE
OE LOW to Data Valid 8 10 ns
t
LZOE
OE LOW to Low Z 0 0 ns
t
HZOE
OE HIGH to High Z
[6, 7]
810ns
t
LZCE
CE LOW to Low Z
[7]
35ns
t
HZCE
CE HIGH to High Z
[6, 7]
810ns
t
PU
CE LOW to Power-Up 0 0 ns
t
PD
CE HIGH to Power-Down 20 25 ns
t
DBE
Byte Enable to Data Valid 8 10 ns
t
LZBE
Byte Enable to Low Z 0 0 ns
t
HZBE
Byte Disable to High Z 8 10 ns
WRITE CYCLE
[8, 9]
t
WC
Write Cycle Time 20 25 ns
t
SCE
CE LOW to Write End 13 15 ns
t
AW
Address Set-Up to Write End 13 15 ns
t
HA
Address Hold from Write End 0 0 ns
t
SA
Address Set-Up to Write Start 0 0 ns
t
PWE
WE Pulse Width 13 15 ns
t
SD
Data Set-Up to Write End 9 10 ns
t
HD
Data Hold from Write End 0 0 ns
t
LZWE
WE HIGH to Low Z
[7]
35ns
t
HZWE
WE LOW to High Z
[6, 7]
810ns
t
BW
Byte Enable to End of Write 13 15 ns
Data Retention Characteristics Over the Operating Range (L version only)
Parameter Description Conditions
[11]
Min. Max. Unit
V
DR
V
CC
for Data Retention 2.0 V
I
CCDR
Data Retention Current Com’l L V
CC
= V
DR
= 3.0V,
CE
> V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
200 mA
t
CDR
[3]
Chip Deselect to Data Retention Time 0 ns
t
R
[10]
Operation Recovery Time t
RC
ns
Notes:
10. t
r
< 3 ns for the -12 and -15 speeds. t
r
< 5 ns for the -20 and slower speeds.
11. No input may exceed V
CC
+ 0.5V.
[+] Feedback
CY7C1041B
Document #: 38-05142 Rev. *A Page 6 of 11
Data Retention Waveform
3.0V3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
Switching Waveforms
Read Cycle No. 1
[12, 13]
Read Cycle No. 2 (OE Controlled)
[13, 14]
Notes:
12. Device is continuously selected. OE
, CE, BHE, and/or BHE = V
IL
.
13. WE
is HIGH for read cycle.
14. Address valid prior to or coincident with CE
transition LOW.
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
t
DBE
t
LZBE
t
HZCE
BHE, BLE
CURRENT
[+] Feedback

CY7C1041B-15VC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 4M PARALLEL 44SOJ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet