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PMPB100ENEX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
Nexperia
PMPB100ENE
30 V
, N-channel MOSFET
V
DS
(V)
0
4
3
1
2
aaa-026681
16
I
D
(A)
0
12
8
4
3.7 V
3.4 V
3.0 V
2.7 V
V
GS
= 10 V
4.5 V
T
j
= 25 °C
Fig. 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-022260
V
GS
(V)
0
3
2
1
10
-4
10
-5
10
-3
I
D
(A)
10
-6
min
typ
m
ax
T
j
= 25 °C; V
DS
= 5 V
Fig. 7.
Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0
4
8
12
16
aaa-026682
300
R
DSon
(mΩ)
0
50
100
150
200
250
3.7 V
3.4 V
3.0 V
2.7 V
4.5 V
V
GS
= 10 V
T
j
= 25 °C
Fig. 8.
Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0
4
8
12
16
20
aaa-026683
300
R
DSon
0
50
100
150
200
250
T
j
= 175 °C
T
j
= 25 °C
I
D
= 3.9 A
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
26 April 2018
7 / 15
Nexperia
PMPB100ENE
30 V
, N-channel MOSFET
V
GS
(V)
0
1
2
3
4
5
aaa-026684
16
I
D
(A)
0
12
8
4
T
j
= 25 °C
T
j
= 175 °C
V
DS
> I
D
x R
DSon
Fig. 10.
T
ransfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60
180
120
0
60
aaa-026685
1.0
0.5
1.5
2.0
a
0
Fig. 1
1.
Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60
180
120
0
60
aaa-026686
3
V
GS(th)
(V)
0
2
1
max
typ
min
I
D
= 250 µA; V
DS
= V
GS
Fig. 12.
Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
10
1
aaa-026687
10
3
C
(pF)
10
10
2
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
26 April 2018
8 / 15
Nexperia
PMPB100ENE
30 V
, N-channel MOSFET
Q
G
(nC)
0
1
2
3
4
aaa-026688
4
6
2
8
10
V
GS
(V)
0
V
DS
= 15 V; I
D
= 3.9 A; T
amb
= 25 °C
Fig. 14.
Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15.
Gate charge waveform definitions
V
SD
(V)
0
0.4
0.8
1.2
aaa-026689
10
8
6
4
2
I
S
(A)
0
T
j
= 175 °C
T
j
= 25 °C
V
GS
= 0 V
Fig. 16.
Source current as a function of source-drain voltage; typical values
1
1. T
est information
t
1
t
2
P
t
006aaa812
d
u
ty cycle δ
=
t
1
t
2
Fig. 17.
Duty cycle definition
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
26 April 2018
9 / 15
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PMPB100ENEX
Mfr. #:
Buy PMPB100ENEX
Manufacturer:
Nexperia
Description:
MOSFET PMPB100ENE/SOT1220/SOT1220
Lifecycle:
New from this manufacturer.
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