SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995 ✪
COMPLEMENTARY TYPE – BCV49
PARTMARKING DETAIL – EE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-800 mA
Continuous Collector Current I
C
-500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 V
I
E
=-10µA
Collector Cut-Off
Current
I
CBO
-100
-10
nA
µA
V
CB
=-60V
V
CB
=-60V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1 V I
C
=-100mA, I
B
-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.5 V I
C
=-100mA, I
B
=-0.1mA*
Static Forward Current
Transfer Ratio
h
FE
2000
4000
10000
2000
I
C
=-100µA, V
CE
=-1V†
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
Transition Frequency f
T
200 MHz I
C
=-50mA, V
CE
=-5V
f = 20MHz
Output Capacitance C
obo
4.5 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
† Periodic Sample Test Only.
BCV48
C
C
B
E
SOT89
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