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BFR30LT1G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 4
1 Publication Order Number:
BFR30LT1/D
BFR30LT1, BFR31LT1
JFET Amplifiers
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Gate−Source Voltage V
GS
25 Vdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the
recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
Device Package Shipping
†
BFR30LT1 SOT−23 3000/Tape & Reel
SOT−23
CASE 318
STYLE 10
MARKING
DIAGRAM
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 DRAIN
2 SOURCE
3
GATE
1
2
3
BFR30LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
BFR31LT1 SOT−23 3000/Tape & Reel
1
MxM
x = 1 or 2
M = Date Code
BFR31LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
BFR30LT1, BFR31LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate Reverse Current (V
GS
= 10 Vdc, V
DS
= 0) I
GSS
− 0.2 nAdc
Gate Source Cutoff Voltage (I
D
= 0.5 nAdc, V
DS
= 10 Vdc) BFR30
BFR31
V
GS(OFF)
−
−
5.0
2.5
Vdc
Gate Source Voltage (I
D
= 1.0 mAdc, V
DS
= 10 Vdc) BFR30
BFR31
(I
D
= 50 Adc, V
DS
= 10 Vdc) BFR30
BFR31
V
GS
−0.7
−
−
−
−3.0
−1.3
−4.0
−2.0
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
DS
= 10 Vdc, V
GS
= 0) BFR30
BFR31
I
DSS
4.0
1.0
10
5.0
mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transconductance
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 kHz) BFR30
BFR31
(I
D
= 200 Adc, V
DS
= 10 Vdc, f = 1.0 kHz) BFR30
BFR31
y
fs
1.0
1.5
0.5
0.75
4.0
4.5
−
−
mmhos
Output Admittance
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 kHz) BFR30
(I
D
= 200 Adc, V
DS
= 10 Vdc) BFR31
y
os
40
20
25
15
mhos
Input Capacitance (I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 MHz)
(I
D
= 200 Adc, V
DS
= 10 Vdc, f = 1.0 MHz)
C
iss
−
−
5.0
4.0
pF
Reverse Transfer Capacitance (I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 MHz)
(I
D
= 200 Adc, V
DS
= 10 Vdc, f = 1.0 MHz)
C
rss
−
−
1.5
1.5
pF
TYPICAL CHARACTERISTICS
f, FREQUENCY (kHz)
Figure 1. Noise Figure versus Frequency
R
S
, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
14
0.01
4
3
2
0
12
1
0.1 1.0 10
100
5
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0
10
V
DS
= 15 V
V
GS
= 0
R
S
= 1 M
V
DS
= 15 V
V
GS
= 0
f = 1 kHz
BFR30LT1, BFR31LT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Typical Drain Characteristics
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
1.0
0.4
0.2
0
−1.2
0.8
0.6
0 5 10 15 20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
−0.8 −0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
V
DS
= 15 V
V
GS
= 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
V
GS(OFF)
−1.2 V
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. Typical Drain Characteristics
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
Figure 6. Common Source Transfer
Characteristics
0
4
3
2
1
0
−4
5
510152025
5
4
3
2
1
0
−5
−3 −2 −1 0
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
V
DS
= 15 V
V
GS
= 0 V
−2 V
−1 V
−3 V
V
GS(OFF)
−3.5 V
V
GS(OFF)
−3.5 V
V
GS(OFF)
−1.2 V
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
V
GS
, GATE − SOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
0
10
4
2
0
−7
8
6
−6 −5 −4 −3 −2 −1
V
DS
= 15 V
V
GS(OFF)
−5.8 V
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
10
4
2
0
8
6
0 5 10 15 20 25
V
GS(OFF)
−5.8 V
V
GS
= 0 V
−1 V
−2 V
−3 V
−4 V
−5 V
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Under dc conditions, self heating in higher I
DSS
units reduces I
DSS
.
P1-P3P4-P4

BFR30LT1G

Mfr. #:
Buy BFR30LT1G
Manufacturer:
ON Semiconductor
Description:
RF JFET Transistors 25V 10mA
Lifecycle:
New from this manufacturer.
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